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Rodriguez-Fano, M., Haydoura, M., Tranchant, J., Janod, E., Corraze, B., Jouan, P.-Y., Cario, L. & Besland, M.-P. (2023) Enhancing the Resistive Memory Window through Band Gap Tuning in Solid Solution (Cr1-xVx)2O3. ACS Appl. Mater. Interfaces, 15 54611–54621. 
Added by: Richard Baschera (2023-12-22 08:14:07)   Last edited by: Richard Baschera (2024-01-24 09:31:26)
Type de référence: Article
DOI: 10.1021/acsami.3c09387
Numéro d'identification (ISBN etc.): 1944-8244
Clé BibTeX: RodriguezFano2023
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Catégories: PCM, PMN
Créateurs: Besland, Cario, Corraze, Haydoura, Janod, Jouan, Rodriguez-Fano, Tranchant
Collection: ACS Appl. Mater. Interfaces
Consultations : 1/134
Indice de consultation : 22%
Indice de popularité : 5.5%
Liens URLs     https://doi.org/10.1021/acsami.3c09387
Résumé     
Memories based on the insulator-to-metal transition in correlated insulators are promising to overcome the limitations of alternative nonvolatile memory technologies. However, associated performances have been demonstrated so far only on narrow-gap compounds, such as (V0.95Cr0.05)2O3, exhibiting a tight memory window. In the present study, V-substituted Cr2O3 compounds (Cr1–xVx)2O3 have been synthesized and widely investigated in thin films, single crystals, and polycrystalline powders, for the whole range of chemical composition (0 {<} x {<} 1). Physicochemical, structural, and optical properties of the annealed magnetron-sputtered thin films are in very good agreement with those of polycrystalline powders. Indeed, all compounds exhibit the same crystalline structure with a cell parameter evolution consistent with a solid solution over the whole range of x values, as demonstrated by X-ray diffraction and Raman scattering. Moreover, the optical band gap of V-substituted Cr2O3 compounds decreases from 3 eV for Cr2O3 to 0 eV for V2O3. In the same way, resistivity is decreased by almost 5 orders of magnitude as the V content x is varying from 0 to 1, similarly in thin films and single crystals. Finally, a reversible resistive switching has been observed for thin films of three selected V contents (x = 0.30, 0.70, and 0.95). Resistive switching performed on MIM devices based on a 50 nm thick (Cr0.30V0.70)2O3 thin film shows a high endurance of 1000 resistive switching cycles and a memory window ROFF/RON higher by 3 orders of magnitude, as compared to (Cr0.05V0.95)2O3. This comprehensive study demonstrates that a large range of memory windows can be reached by tuning the band gap while varying the V content in the (Cr1–xVx)2O3 solid solution. It thus confirms the potential of correlated insulators for memory applications.
  
Notes     
Publisher: American Chemical Society
  
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