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Sarrazin, A., Pimenta-Barros, P., Posseme, N., Barnola, S., Gharbi, A., Argoud, M., Tiron, R. & Cardinaud, C. (2015) PMMA removal selectivity to PS using dry etch approach for sub-10nm node applications.
Added by: Richard Baschera (2016-12-07 14:49:32) Last edited by: Richard Baschera (2018-03-07 11:37:08) |
| Type de référence: Livre Clé BibTeX: Sarrazin2015 Voir tous les détails bibliographiques  |
Catégories: PCM Créateurs: Argoud, Barnola, Cardinaud, Gharbi, Pimenta-Barros, Posseme, Sarrazin, Tiron |
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| Résumé |
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Directed Self-Assembly (DSA) of Block Copolymers (BCP) is one of the most promising alternative lithography techniques for sub-10 nm nodes. In this paper, we propose to study PMMA removal selectively to PS by plasma etching. This challenge requires a good selectivity between both polymers. Our best chemistries developed on blanket wafers have been tested on cylindrical and lamellar patterned wafers.
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