Souchier, E., Besland, M. .-P., Tranchant, J., Corraze, B., Moreau, P., Retoux, R., Estournes, C., Mazoyer, P., Cario, L. & Janod, E. (2013) Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application. Thin Solid Films, 533 54–60.
Added by: Laurent Cournède (2016-03-10 21:23:31)
|Type de référence: Article
Numéro d'identification (ISBN etc.): 0040-6090
Clé BibTeX: Souchier2013
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Créateurs: Besland, Cario, Corraze, Estournes, Janod, Mazoyer, Moreau, Retoux, Souchier, Tranchant
Collection: Thin Solid Films
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We report here on the deposition of GaV4S8 thin layers by radio frequency (RF) magnetron sputtering in pure argon using a GaV4S8 target synthesized by spark plasma sintering. Thin layers were deposited at low deposition pressure and RF power, respectively 5.33 Pa and 60 W (i.e. 3 W cm(-2)). Since as-deposited thin layers were sulfur-poor and amorphous, a one hour ex-situ annealing at 873 K in a sulfur-rich atmosphere was performed to restore the stoichiometric composition GaV4S8 and the expected crystalline structure. Chemical analyses and high resolution transmission electron microscopy observations of thin layers are consistent with a GaV4S8 phase without any secondary phase. Rietveld refinements of the X-ray diffraction (XRD) patterns confirm the good crystalline quality of the annealed deposited film constituted of crystallites exhibiting an average grain size in the 32-36 nm range. Moreover, an excellent agreement was obtained between Rietveld refinement performed on GaV4S8 powder and thin films XRD data. (C) 2012 Elsevier B.V. All rights reserved.
Added by: Laurent Cournède