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Stoliar, P., Cario, L., Janod, E., Corraze, B., Guillot-Deudon, C., Salmon-Bourmand, S., Guiot, V., Tranchant, J. & Rozenberg, M. (2013) Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators. Adv. Mater. 25 3222–3226. 
Added by: Laurent Cournède (2016-03-10 21:23:30)
Type de référence: Article
DOI: 10.1002/adma.201301113
Numéro d'identification (ISBN etc.): 0935-9648
Clé BibTeX: Stoliar2013
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Catégories: PMN
Mots-clés: am4 q8, breakdown, devices, gata4se8, memories, Mott insulators, NiS2, phase, possible superconductivity, resistive switching, strongly correlated systems, systems, v2o3
Créateurs: Cario, Corraze, Guillot-Deudon, Guiot, Janod, Rozenberg, Salmon-Bourmand, Stoliar, Tranchant
Collection: Adv. Mater.
Consultations : 3/567
Indice de consultation : 3%
Indice de popularité : 0.75%
Résumé     
A striking universality in the electric-field-driven resistive switching is shown in three prototypical narrow-gap Mott systems. This model, based on key theoretical features of the Mott phenomenon, reproduces the general behavior of this resistive switching and demonstrates that it can be associated with a dynamically directed avalanche. This model predicts non-trivial accumulation and relaxation times that are verified experimentally.
Added by: Laurent Cournède  
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