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Rodriguez-Alvarez, H., Barreau, N., Kaufmann, C. A., Weber, A., Klaus, M., Painchaud, T., Schock, H. .-W. & Mainz, R. (2013) Recrystallization of Cu(In,Ga)Se-2 thin films studied by X-ray diffraction. Acta Mater. 61 4347–4353. 
Added by: Laurent Cournède (2016-03-10 21:23:30)
Type de référence: Article
DOI: 10.1016/j.actamat.2013.04.006
Numéro d'identification (ISBN etc.): 1359-6454
Clé BibTeX: RodriguezAlvarez2013
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Catégories: CESES
Mots-clés: crystals, cu(in, cuinse2, faults, ga)se-2, Recrystallization, solar-cells, Stacking faults, X-ray diffraction
Créateurs: Barreau, Kaufmann, Klaus, Mainz, Painchaud, Rodriguez-Alvarez, Schock, Weber
Collection: Acta Mater.
Consultations : 2/509
Indice de consultation : 3%
Indice de popularité : 0.75%
Recrystallization is essential for the synthesis of the highest quality Cu(In,Ga)Se-2 (CIGSe) thin films for solar cell applications. Here we present a real-time study of the recrystallization of CIGSe thin films We trigger the recrystallization by allowing diffusion of Cu into a Cu-poor CIGSe film and use synchrotron-based energy-dispersive X-ray diffraction to monitor this transition in real time. Additionally, we characterize the films by means of angle-dispersive X-ray diffraction. Before recrystallization, the X-ray diffraction patterns exhibit a signature that does not correspond to the ideal chalcopyrite structure of CIGSe. This signature can be attributed to stacking faults within the bulk of the films by modeling diffraction patterns of faulted CIGSe with the software DIFFaX. It is detected at temperatures below 650 K and is absent at temperatures above 750 K, which indicates that the faults in question were annihilated in this temperature range. This process occurs after the incorporation of Cu into the Cu-poor CIGSe lattice, which takes place in the 550-650 K temperature range. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Added by: Laurent Cournède  
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