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Girard, A., Geneste, F., Coulon, N., Cardinaud, C. & Mohammed-Brahim, T. (2013) SiGe derivatization by spontaneous reduction of aryl diazonium salts. Appl. Surf. Sci. 282 146–155. 
Added by: Laurent Cournède (2016-03-10 21:23:30)
Type de référence: Article
DOI: 10.1016/j.apsusc.2013.05.091
Numéro d'identification (ISBN etc.): 0169-4332
Clé BibTeX: Girard2013
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Catégories: PCM
Mots-clés: atomic-force microscopy, carbon surfaces, covalent immobilization, Derivatization, Diazonium salts, electrochemical reduction, field-effect transistors, Film thickness, germanium, germanium nanowires, multilayer formation, phenyl layers, Plasma etching, ray photoelectron-spectroscopy, semiconductors, silicon
Créateurs: Cardinaud, Coulon, Geneste, Girard, Mohammed-Brahim
Collection: Appl. Surf. Sci.
Consultations : 10/372
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
Germanium semiconductors have interesting properties for FET-based biosensor applications since they possess high surface roughness allowing the immobilization of a high amount of receptors on a small surface area. Since SiGe combined low cost of Si and intrinsic properties of Ge with high mobility carriers, we focused the study on this particularly interesting material. The comparison of the efficiency of a functionalization process involving the spontaneous reduction of diazonium salts is studied on Si(1 0 0), SiGe and Ge semiconductors. XPS analysis of the functionalized surfaces reveals the presence of a covalent grafted layer on all the substrates that was confirmed by AFM. Interestingly, the modified Ge derivatives have still higher surface roughness after derivatization. To support the estimated thickness by XPS, a step measurement of the organic layers is done by AFM or by profilometer technique after a O-2 plasma etching of the functionalized layer. This original method is well-adapted to measure the thickness of thin organic films on rough substrates such as germanium. The analyses show a higher chemical grafting on SiGe substrates compared with Si and Ge semiconductors. (C) 2013 Elsevier B.V. All rights reserved.
Added by: Laurent Cournède  
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