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Stoliar, P., Rozenberg, M., Janod, E., Corraze, B., Tranchant, J. & Cario, L. (2014) Nonthermal and purely electronic resistive switching in a Mott memory. Phys. Rev. B, 90 045146. 
Added by: Laurent Cournède (2016-03-10 21:01:55)
Type de référence: Article
DOI: 10.1103/PhysRevB.90.045146
Numéro d'identification (ISBN etc.): 1098-0121
Clé BibTeX: Stoliar2014
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Catégories: PMN
Mots-clés: avalanche breakdown, devices, field, gata4se8, metal-insulator-transition, nanoscale, phase, possible superconductivity, vo2
Créateurs: Cario, Corraze, Janod, Rozenberg, Stoliar, Tranchant
Collection: Phys. Rev. B
Consultations : 4/504
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
Mott insulator to metal transitions under an electric field are currently the subject of numerous fundamental and applied studies. This puzzling effect, which involves nontrivial out-of-equilibrium effects in correlated systems, is indeed at play in the operation of a new class of electronic memories, the "Mott memories." However, the combined electronic and thermal effects are difficult to disentangle in Mott insulators undergoing such transitions. We report here a comparison between the properties under an electric field of a canonical Mott insulator and a model built on a realistic two-dimensional resistor network able to capture both thermal effects and electronic transitions. This comparison made specifically on the family of narrow gap Mott insulators AM(4)Q(8), (A = Ga or Ge; M = V, Nb or Ta; and Q = S or Se) unambiguously establishes that the resistive transition experimentally observed under an electric field arises from a purely electronic mechanism.
Added by: Laurent Cournède  
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