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Stoliar, P., Rozenberg, M., Janod, E., Corraze, B., Tranchant, J. & Cario, L. (2014) Nonthermal and purely electronic resistive switching in a Mott memory. Phys. Rev. B, 90 045146.
Added by: Laurent Cournède (2016-03-10 21:01:55) |
| Type de référence: Article DOI: 10.1103/PhysRevB.90.045146 Numéro d'identification (ISBN etc.): 1098-0121 Clé BibTeX: Stoliar2014 Voir tous les détails bibliographiques  |
Catégories: PMN Mots-clés: avalanche breakdown, devices, field, gata4se8, metal-insulator-transition, nanoscale, phase, possible superconductivity, vo2 Créateurs: Cario, Corraze, Janod, Rozenberg, Stoliar, Tranchant Collection: Phys. Rev. B |
Consultations : 1/652
Indice de consultation : 4% Indice de popularité : 1% |
| Résumé |
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Mott insulator to metal transitions under an electric field are currently the subject of numerous fundamental and applied studies. This puzzling effect, which involves nontrivial out-of-equilibrium effects in correlated systems, is indeed at play in the operation of a new class of electronic memories, the "Mott memories." However, the combined electronic and thermal effects are difficult to disentangle in Mott insulators undergoing such transitions. We report here a comparison between the properties under an electric field of a canonical Mott insulator and a model built on a realistic two-dimensional resistor network able to capture both thermal effects and electronic transitions. This comparison made specifically on the family of narrow gap Mott insulators AM(4)Q(8), (A = Ga or Ge; M = V, Nb or Ta; and Q = S or Se) unambiguously establishes that the resistive transition experimentally observed under an electric field arises from a purely electronic mechanism.
Added by: Laurent Cournède |