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Leonard, E., Arzel, L., Tomassini, M., Zabierowski, P., Fuertes Marron, D. & Barreau, N. (2014) Cu(In,Ga)Se-2 absorber thinning and the homo-interface model: Influence of Mo back contact and 3-stage process on device characteristics. J. Appl. Phys. 116 074512. 
Added by: Laurent Cournède (2016-03-10 21:01:55)
Type de référence: Article
DOI: 10.1063/1.4891478
Numéro d'identification (ISBN etc.): 0021-8979
Clé BibTeX: Leonard2014
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Mots-clés: electronic-properties, films, heterojunction solar-cells, performance, recombination, thickness
Créateurs: Arzel, Barreau, Fuertes Marron, Leonard, Tomassini, Zabierowski
Collection: J. Appl. Phys.
Consultations : 9/425
Indice de consultation : 2%
Indice de popularité : 0.5%
Thinning the absorber layer is one of the possibilities envisaged to further decrease the production costs of Cu(In,Ga)Se-2 (CIGSe) thin films solar cell technology. In the present study, the electronic transport in submicron CIGSe-based devices has been investigated and compared to that of standard devices. It is observed that when the absorber is around 0.5 mu m-thick, tunnelling enhanced interface recombination dominates, which harms cells energy conversion efficiency. It is also shown that by varying either the properties of the Mo back contact or the characteristics of 3-stage growth processing, one can shift the dominating recombination mechanism from interface to space charge region and thereby improve the cells efficiency. Discussions on these experimental facts led to the conclusions that 3-stage process implies the formation of a CIGSe/CIGSe homo-interface, whose location as well as properties rule the device operation; its influence is enhanced in submicron CIGSe based solar cells. (C) 2014 AIP Publishing LLC.
Added by: Laurent Cournède  
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