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Baer, M., Barreau, N., Couzinie-Devy, F., Weinhardt, L., Wilks, R. G., Kessler, J. & Heske, C. (2016) Impact of Annealing -Induced Intermixing on the Electronic Level Alignment at the In2S3/Cu(In,Ga)Se-2 Thin-Film Solar Cell Interface. ACS Appl. Mater. Interfaces, 8 2120–2124. 
Added by: Laurent Cournède (2016-03-10 18:36:43)
Type de référence: Article
DOI: 10.1021/acsami.5b10614
Numéro d'identification (ISBN etc.): 1944-8244
Clé BibTeX: Baer2016
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Mots-clés: alcvd, band offset, chalcopyrite solar cell, cuinse2, deposition, heterojunction, in2s3, In2S3 buffer, indium sulfide, intermixing, inverse photoemission, na2s, performance, pvd, sulfide buffer layers
Créateurs: Baer, Barreau, Couzinie-Devy, Heske, Kessler, Weinhardt, Wilks
Collection: ACS Appl. Mater. Interfaces
Consultations : 1/758
Indice de consultation : 5%
Indice de popularité : 1.25%
The interface between a nominal In2S3 buffer and a Cu(In,Ga)Se-2 (CIGSe) thinfilm solar cell absorber was investigated by direct and inverse photoemission to determine the interfacial electronic structure. On the basis of a previously reported heavy intermixing at the interface (S diffuses into the absorber; Cu diffuses into the buffer; and Na diffuses through it), we determine here the band alignment at the interface. The results suggest that the pronounced intermixing at the In2S3/CIGSe interface leads to a favorable electronic band alignment, necessary for high-efficiency solar cell devices.
Added by: Laurent Cournède  
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