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Ben Messaoud, K., Buffiere, M., Brammertz, G., ElAnzeery, H., Oueslati, S., Hamon, J., Kniknie, B. J., Meuris, M., Amlouk, M. & Poortmans, J. (2015) Impact of the Cd2+ treatment on the electrical properties of Cu2ZnSnSe4 and Cu(In,Ga)Se-2 solar cells. Prog. Photovoltaics, 23 1608–1620.
Added by: Laurent Cournède (2016-03-10 18:36:40) |
| Type de référence: Article DOI: 10.1002/pip.2599 Numéro d'identification (ISBN etc.): 1062-7995 Clé BibTeX: BenMessaoud2015 Voir tous les détails bibliographiques  |
Catégories: IMN Mots-clés: buffer layers, cbd-cds, Cd PE treatment, CdS heterojunction, chalcopyrite, CIGSe, cuinse2, CZTSe, interface recombination, kesterite, modules, thin-film photovoltaics, voltage Créateurs: Amlouk, Ben Messaoud, Brammertz, Buffiere, ElAnzeery, Hamon, Kniknie, Meuris, Oueslati, Poortmans Collection: Prog. Photovoltaics |
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| Résumé |
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The present contribution aims at determining the impact of modifying the properties of the absorber/buffer layer interface on the electrical performance of Cu2ZnSnSe4 (CZTSe) thin-film solar cells, by using a Cd2+ partial electrolyte (Cd PE) treatment of the absorber before the buffer layer deposition. In this work, CZTSe/CdS solar cells with and without Cd PE treatment were compared with their respective Cu(In,Ga)Se-2 (CIGSe)/CdS references. The Cd PE treatment was performed in a chemical bath for 7min at 70 degrees C using a basic solution of cadmium acetate. X-ray photoemission spectroscopy measurements have revealed the presence of Cd at the absorber surface after the treatment. The solar cells were characterized using current density-voltage (J-V), external quantum efficiency, and drive-level capacitance profiling measurements. For the CZTSe-based devices, the fill factor increased from 57.7\% to 64.0\% when using the Cd PE treatment, leading to the improvement of the efficiency () from 8.3\% to 9.0\% for the best solar cells. Similar observations were made on the CIGSe solar cell reference. This effect comes from a considerable reduction of the series resistance (R-S) of the dark and light J-V, as determined using the one-diode model. The crossover effect between dark and light J-V curves is also significantly reduced by Cd PE treatment. Copyright (c) 2015 John Wiley \& Sons, Ltd.
Added by: Laurent Cournède |