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Bertin, E., Durand, O., Létoublon, A., Cornet, C., Arzel, L., Choubrac, L., Bernard, R., Gautron, E., Harel, S., Jullien, M., Rohel, T., Assmann, L. & Barreau, N. (2023) Unveiling the role of copper content in the crystal structure and phase stability of epitaxial Cu(In,Ga)S2 films on GaP/Si(001). Materials Science in Semiconductor Processing, 166 107685.
Added by: Richard Baschera (2023-08-24 08:47:25) Last edited by: Richard Baschera (2023-08-24 08:57:26) |
| Type de référence: Article DOI: 10.1016/j.mssp.2023.107685 Numéro d'identification (ISBN etc.): 1369-8001 Clé BibTeX: Bertin2023 Voir tous les détails bibliographiques  |
Catégories: IMN, MIOPS Mots-clés: Epitaxial growth, GaP/Si(001), Phase stability, Tandem solar cells, Wide bandgap CIGS, X-ray diffraction Créateurs: Arzel, Assmann, Barreau, Bernard, Bertin, Choubrac, Cornet, Durand, Gautron, Harel, Jullien, Létoublon, Rohel Collection: Materials Science in Semiconductor Processing |
Consultations : 1/160
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| Liens URLs https://www.scienc ... /S1369800123003785 |
| Résumé |
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This study examines the growth condition to obtain a single-phase Cu(In,Ga)S2 (CIGS) chalcopyrite film epitaxially grown by coevaporation on a GaP/Si(001) pseudo-substrate. In particular, we report the structural differences between KCN-etched Cu-rich and Cu-poor CIGS films coevaporated on GaP/Si(001) by 1-stage process. The Cu-poor CIGS film consists of at least three phases; the main crystal is found to be chalcopyrite-ordered, coexisting with In-rich CuIn5S8, and CuAu-ordered CuInS2, all sharing epitaxial relationships with each other and the GaP/Si(001) pseudo-substrate. On the other hand, the Cu-rich CIGS film is single-phase chalcopyrite and displays sharper X-ray diffraction peaks and a lower density of microtwin defects. The elimination of the secondary CuAu-ordered phase with Cu excess is demonstrated. In both films, the chalcopyrite crystal exclusively grows with its c-axis aligned with the out-of-plane direction of Si[001]. This study confirms prior findings on the thermodynamics of Cu–In-Ga-S and the stability of secondary phases.
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