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Rupp, J. A. J., Corraze, B., Besland, M.-P., Cario, L., Tranchant, J., Wouters, D. J., Waser, R. & Janod, E. (2020) Control of stoichiometry and morphology in polycrystalline V(2)O(3)thin films using oxygen buffers. Journal of Materials Science, 55 14717–14727. 
Added by: Richard Baschera (2020-11-25 15:25:13)   Last edited by: Richard Baschera (2020-11-25 15:26:23)
Type de référence: Article
DOI: 10.1007/s10853-020-05028-0
Numéro d'identification (ISBN etc.): 0022-2461
Clé BibTeX: Rupp2020a
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Créateurs: Besland, Cario, Corraze, Janod, Rupp, Tranchant, Waser, Wouters
Collection: Journal of Materials Science
Consultations : 8/288
Indice de consultation : 6%
Indice de popularité : 1.5%
In this work, we investigate the influence of low temperature reduction conditions (873 K) by different oxygen buffers on the off-stoichiometry of polycrystalline V(2)O(3)thin films. Vanadium oxide thin films (thickness 300 nm and 100 nm) have been grown by reactive sputtering and have been annealed in a buffered atmosphere subsequently. Buffer couples were chosen throughout the stability range of V2-yO3(y {<}= 0.03) by the use of different oxygen buffer combinations, namely Ni/NiO, Fe/Fe3O4, Cr/Cr(2)O(3)and Mn/MnO. Thin films have been characterized by scanning electron microscopy, X-ray diffractometry and low temperature electrical transport measurements. Upon decreasing the oxygen partial pressure, the mean grain size of V(2)O(3)decreases systematically from 45 +/- 20 nm with a high porosity to 27 +/- 10 nm without porosity. The most favourable reduction conditions have been identified for Fe- and Cr-based couples. Moreover, all thin films reduced by the four buffer couples exhibit high insulator-to-metal transition temperatures (110-155 K) close to the value of ideally stoichiometric V2-yO3(y {<} 0.005) (155 K) as well as large changes in resistance at the transition (three to five orders of magnitude). This oxygen buffer method hence provides a valuable synthesis method of highly stoichiometric polycrystalline V(2)O(3)thin films with technological relevance.
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