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Plujat, B., Glenat, H., Bousquet, A., Frezet, L., Hamon, J., Goullet, A., Tomasella, E., Hernandez, E., Quoizola, S. & Thomas, L. (2020) SiCN:H thin films deposited by MW-PECVD with liquid organosilicon precursor: Gas ratio influence versus properties of the deposits. Plasma Process. Polym. 17 e1900138. 
Added by: Richard Baschera (2019-12-20 09:42:21)   Last edited by: Richard Baschera (2020-04-24 08:36:50)
Type de référence: Article
DOI: 10.1002/ppap.201900138
Numéro d'identification (ISBN etc.): 1612-8850
Clé BibTeX: Plujat2020
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Catégories: IMN, PCM
Mots-clés: behavior, c-n films, chemical-vapor-deposition, coatings, h, h films, mechanical-properties, microstructure, mw-pecvd, optical-emission spectroscopy, si-n, SiCN, silicon-carbon nitride, tetramethylsilane, thin layer properties
Créateurs: Bousquet, Frezet, Glenat, Goullet, Hamon, Hernandez, Plujat, Quoizola, Thomas, Tomasella
Collection: Plasma Process. Polym.
Consultations : 13/496
Indice de consultation : 6%
Indice de popularité : 1.5%
Résumé     
Silicon carbonitride SiCN:H thin films are deposited with microwave plasma-enhanced chemical vapor deposition. Argon, ammonia, and tetramethylsilane (TMS) (Ar/NH3/Si(CH3)(4)) are used for the gas mixture. Plasma gas phase chemistry is studied using optical emission spectroscopy according to the TMS/NH3 gas flow ratio, highlighting the presence of three discharge regimes. Then, the deposited SiCN:H thin films are analyzed by X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy, enabling us to correlate plasma and film chemistry. Thus, we define three thin film families corresponding to the three discharge regimes occurring in the plasma phase. Properties of these families are studied: Optical properties by spectroscopic ellipsometry, electrical properties by I-V measurements and electron spin resonance, and mechanical properties by nanoindentation and tribology.
  
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