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Bakker, K., Ahman, H. N., Aantjes, K., Barreau, N., Weeber, A. & Theelen, M. (2019) Material Property Changes in Defects Caused by Reverse Bias Exposure of CIGS Solar Cells. IEEE J. Photovolt. 9 1868–1872. 
Added by: Richard Baschera (2019-12-17 10:13:28)   Last edited by: Richard Baschera (2019-12-17 10:16:19)
Type de référence: Article
DOI: 10.1109/JPHOTOV.2019.2940486
Numéro d'identification (ISBN etc.): 2156-3381
Clé BibTeX: Bakker2019
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Mots-clés: Cadmium, electric breakdown, photoluminescence (PL), photovoltaic (PV) cells, reliability, thin film devices
Créateurs: Aantjes, Ahman, Bakker, Barreau, Theelen, Weeber
Collection: IEEE J. Photovolt.
Consultations : 8/237
Indice de consultation : 3%
Indice de popularité : 0.75%
Partial shading of Cu(In,Ga)Se 2 modules can lead to the formation of reverse bias induced wormlike defects. These wormlike defects act as local shunts and permanently decrease module output. A good understanding of the formation and propagationmechanisms of these defects is needed in order tomitigate the negative effects, or to prevent these defects from forming. In this article, wormlike defects were formed on small nonencapsulated cells by exposing them to reverse bias conditions. Scanning electron microscopy-energy-dispersive X-ray spectroscopy measurements showed a rearrangement of elements: Indium, gallium, and copper were replaced by cadmium, whereas selenium was replaced by sulfur in the area around the defect. Moreover, additional electronic-defect levels were found in that area with spectrally resolved photoluminescence spectroscopy. Based on the material changes in the area close to the wormlike defects, a propagation mechanism is proposed. The model assumes a chemical reaction as the driving force for propagation instead of melting because of ohmic heating.
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