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Sarrazin, A., Posseme, N., Barros, P. P., Barnola, S., Claveau, G., Gharbi, A., Argoud, M., Chamiot-Maitral, G., Tiron, R., Nicolet, C., Navarro, C. & Cardinaud, C. (2016) PMMA removal selectivity to PS using dry etch approach: Sub-10nm patterning application. Lin, Q. & Engelmann, S. U. (Eds.), Advanced Etch Technology for Nanopatterning V Bellingham. 
Added by: Richard Baschera (2017-02-02 13:37:30)   Last edited by: Richard Baschera (2017-02-02 13:40:29)
Type de référence: Chapitre/Section
Numéro d'identification (ISBN etc.): 978-1-5106-0017-1
Clé BibTeX: Sarrazin2016
Voir tous les détails bibliographiques
Catégories: PCM
Mots-clés: block copolymer, block-copolymers, etching transfer, lithography, Plasma etching, PMMA removal, PS-b-PMMA
Créateurs: Argoud, Barnola, Barros, Cardinaud, Chamiot-Maitral, Claveau, Engelmann, Gharbi, Lin, Navarro, Nicolet, Posseme, Sarrazin, Tiron
Éditeur: Spie-Int Soc Optical Engineering (Bellingham)
Collection: Advanced {Etch} {Technology} for {Nanopatterning} {V}
Consultations : 8/403
Indice de consultation : 3%
Indice de popularité : 0.75%
Résumé     
For sub-10nm technologies, the semiconductor industry is facing the limits of conventional lithography to achieve narrow dimensions. DSA (Directed Self-Assembly) of Block Copolymers (BCP) is one of the most promising solutions to reach sub-10nm patterns with a high density. One challenge for DSA integration is the removal of PMMA selectively to PS. In this paper, we propose to study PMMA removal selectively to PS by screening different plasma etch chemistries. These chemistries developed on blanket wafers have been tested on cylindrical and lamellar patterned wafers.
  
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