Hssein, M., Cattin, L., Morsli, M., Addou, M. & Bernede, J.-C. (2016) Copper:molybdenum sub-oxide blend as transparent conductive electrode (TCE) indium free. Eur. Phys. J.-Appl. Phys, 74 24604.
Added by: Richard Baschera (2016-07-04 14:27:32) Last edited by: Richard Baschera (2016-07-04 14:29:34)
|Type de référence: Article
Numéro d'identification (ISBN etc.): 1286-0042
Clé BibTeX: Hssein2016
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|Catégories: INTERNATIONAL, MIOPS
Mots-clés: Anode, Copper, film, graphene, layer, metal, organic solar-cells, polymer
Créateurs: Addou, Bernede, Cattin, Hssein, Morsli
Collection: Eur. Phys. J.-Appl. Phys
Consultations : 6/645
Indice de consultation : 4%
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Oxide/metal/oxide structures have been shown to be promising alternatives to ITO. In such structures, in order to decrease the high light reflection of the metal film it is embedded between two metal oxides dielectric. MoO3-x is often used as oxide due to its capacity to be a performing anode buffer layer in organic solar cells, while silver is the metal the most often used . Some attempts to use cheaper metal such as copper have been done. However it was shown that Cu diffuses strongly into MoO3-x . Here we used this property to grow simple new transparent conductive oxide (TCE), i.e., Cu: MoO3-x blend. After the deposition of a thin Cu layer, a film of MoO3-x is deposited by sublimation. An XPS study shows more than 50% of Cu is present at the surface of the structure. In order to limit the Cu diffusion an ultra-thin Al layer is deposited onto MoO3-x. Then, in order to obtain a good hole collecting contact with the electron donor of the organic solar cells, a second MoO3-x layer is deposited. After optimization of the thickness of the different layers, the optimum structure is as follow: Cu (12 nm) : MoO3-x (20 nm)/Al (0.5 nm)/MoO3-x (10 nm). The sheet resistance of this structure is R-sq = 5.2 Omega/sq. and its transmittance is T-max = 65%. The factor of merit Phi(M) = T-10/R-sq. = 2.41 x 10(-3) Omega(-1), which made this new TCE promising as anode in organic solar cells.