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Hamdi, M., Oueslati, A., Lafond, A., Guillot-Deudon, C. & Hlel, F. (2016) Structural, morphological and electrical properties of Cu2ZnSn1-xSixS4 (x=0.8, x=1) for solar-cells applications. J. Alloy. Compd. 674 73–81. 
Added by: Richard Baschera (2016-05-11 06:59:05)   Last edited by: Richard Baschera (2016-12-07 13:39:00)
Type de référence: Article
DOI: 10.1016/j.jallcom.2016.02.219
Numéro d'identification (ISBN etc.): 0925-8388
Clé BibTeX: Hamdi2016
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Mots-clés: band-structure, compound, conduction, Conductivity, crystal, cu2znsise4, cu2znsns4 thin-films, CZTSiS, impedance spectroscopy, Nearest-neighbour hopping, optical-properties, photovoltaic applications, Semiconductor, semiconductors, Variable-range hopping, visible-light
Créateurs: Guillot-Deudon, Hamdi, Hlel, Lafond, Oueslati
Collection: J. Alloy. Compd.
Consultations : 8/584
Indice de consultation : 3%
Indice de popularité : 0.75%
The electrical properties of p-type semiconductor compounds derived from the family of Cu2Zn(Sn,Si)S-4, namely materials with Si-content x = Si/(Sn + Si); (x = 0.8 and x = 1) have been prepared by solid-state reaction method. Structural characterizations of the materials were performed by powder X-ray diffraction and by Energy Dispersive X-ray spectroscopy (EDX) at room temperature. The materials were investigated by impedance spectroscopy technique measured in the 40 Hze-6 MHz frequency range from 100 to 300 K. Besides, the Cole-Cole (Z '' versus Z') plots were well fitted to the equivalent circuits. Furthermore, the AC conductivity was investigated as a function of temperature and frequency in the same range. The different hopping models were used to investigate the characteristics of electrical conduction by hopping in employed temperature range. It was shown that two types of behavior can be expected, nearest-neighbour hopping for temperatures greaten then 220 K (region I) and the Mott variable-range hopping for temperatures lower then 220 K (region II). Characteristic parameters describing conductivity, such as the activation energy (E-NNH), the critical concentration nC of the charge carriers and the acceptor concentration (N-A), in region (I). Moreover, the characteristic temperature (T-0), the density of states at the Fermi levels N(E-F), localization length (xi), hopping distance and average hopping energy, in region (II) were determined and their values were discussed. These results are critical for understanding the behavior of based on polycrystalline from the family of Cu2Zn(Sn,Si)S-4 for absorber materials in solar-cells. (C) 2016 Elsevier B. V. All rights reserved.
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