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Scragg, J. J. S., Choubrac, L., Lafond, A., Ericson, T. & Platzer-Bjorkman, C. (2014) A low-temperature order-disorder transition in Cu2ZnSnS4 thin films. Appl. Phys. Lett. 104 041911. 
Added by: Florent Boucher (2016-04-29 09:26:45)
Type de référence: Article
DOI: 10.1063/1.4863685
Numéro d'identification (ISBN etc.): 0003-6951
Clé BibTeX: Scragg2014
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Catégories: CESES, MIOPS
Mots-clés: cells, kesterite, kinetics, spectroscopy
Créateurs: Choubrac, Ericson, Lafond, Platzer-Bjorkman, Scragg
Collection: Appl. Phys. Lett.
Consultations : 8/427
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
Cu2ZnSnS4 (CZTS) is an interesting material for sustainable photovoltaics, but efficiencies are limited by the low open-circuit voltage. A possible cause of this is disorder among the Cu and Zn cations, a phenomenon which is difficult to detect by standard techniques. We show that this issue can be overcome using near-resonant Raman scattering, which lets us estimate a critical temperature of 533 +/- 10K for the transition between ordered and disordered CZTS. These findings have deep significance for the synthesis of high-quality material, and pave the way for quantitative investigation of the impact of disorder on the performance of CZTS-based solar cells. (C) 2014 AIP Publishing LLC.
Added by: Florent Boucher  
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