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Tranchant, J., Pellaroque, A., Janod, E., Angleraud, B., Corraze, B., Cario, L. & Besland, M. .-P. (2014) Deposition of GaV4S8 thin films by H2S/Ar reactive sputtering for ReRAM applications. J. Phys. D-Appl. Phys. 47 065309.
Added by: Florent Boucher (2016-04-29 09:26:45) |
| Type de référence: Article DOI: 10.1088/0022-3727/47/6/065309 Numéro d'identification (ISBN etc.): 0022-3727 Clé BibTeX: Tranchant2014 Voir tous les détails bibliographiques  |
Catégories: PMN Mots-clés: am(4)q(8), chalcogenide thin films, gap mott insulators, gata4se8, H2S/Ar magnetron reactive sputtering, memory, Mott insulator, non-volatile memory, resistive switching, rram, solar-cell, sulfide, target Créateurs: Angleraud, Besland, Cario, Corraze, Janod, Pellaroque, Tranchant Collection: J. Phys. D-Appl. Phys. |
Consultations : 1/566
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| Résumé |
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The chalcogenide compound GaV4S8 is promising for applications as active materials in non-volatile memory applications. We report here a comprehensive study on the thin-film deposition of this compound using a stoichiometric GaV4S8 target and H2S/Ar reactive sputtering. We show that a fraction of 0.5% to 1% of H2S in the reactive plasma is sufficient to compensate the sulfur deficiency that appears in films deposited in pure Ar plasma. This reactive plasma method allows avoiding the addition of elemental sulfur during the annealing treatment required to obtain a crystallized and stoichiometric GaV4S8 layer. A simple Au/GaV4S8/Au structure presents a resistive switching behaviour well suited for non-volatile memory applications.
Added by: Florent Boucher |