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Thissandier, F., Gentile, P., Pauc, N., Brousse, T., Bidan, G. & Sadkia, S. (2014) Tuning silicon nanowires doping level and morphology for highly efficient micro-supercapacitors. Nano Energy, 5 20–27. 
Added by: Florent Boucher (2016-04-29 09:26:44)
Type de référence: Article
DOI: 10.1016/j.nanoen.2014.01.005
Numéro d'identification (ISBN etc.): 2211-2855
Clé BibTeX: Thissandier2014a
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Catégories: ST2E
Mots-clés: Carbon, cvd, Doping, Electrochemical capacitors, Electrodes, energy, growth, Micro-supercapacitor, porous silicon, Silicon nanowires, ultracapacitors, vls
Créateurs: Bidan, Brousse, Gentile, Pauc, Sadkia, Thissandier
Collection: Nano Energy
Consultations : 1/381
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
Silicon nanowires (SiNWs) are grown by Chemical Vapor Deposition on highly doped silicon wafer via localized gold catalysis with monitored length, diameter, density and doping level. This work highlights the influence of SiNWs morphological characteristics on their electrochemical performances and analyses in details the key role of the doping level for exhibiting a typical double layer capacitive behavior. The electrochemical performances of silicon and SiNWs electrodes are evaluated in an organic electrolyte by electrochemical impedance spectroscopy and cyclic voltammetry. Electrode capacitance has been improved up to 440 mu F cm(-2), i.e. about 75 fold that of bulk and about 10 fold that of the one previously reported. (C) 2014 Elsevier Ltd. All rights reserved.
Added by: Florent Boucher  
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