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Berrada, K., Targaoui, H., Kaddouri, A., Louarn, G., Froyer, G. & Outzourhit, A. (2007) Light emission and scanning electron microscopic characterization of porous silicon. Spectr. Lett. 40 753–762.
Added by: Laurent Cournède (2016-03-10 22:02:31) |
| Type de référence: Article DOI: 10.1080/00387010701429351 Numéro d'identification (ISBN etc.): 0038-7010 Clé BibTeX: Berrada2007 Voir tous les détails bibliographiques  |
Catégories: PMN Mots-clés: beam, bombardment, light emission, morphology, oxidized silicon, porosity, porous silicon, sem, si, Sputtering Créateurs: Berrada, Froyer, Kaddouri, Louarn, Outzourhit, Targaoui Collection: Spectr. Lett. |
Consultations : 1/551
Indice de consultation : 4% Indice de popularité : 1% |
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Optical emission resulting from sputtered species during ion bombardment of porous and oxidized porous silicon targets has been studied. Samples were bombarded with 5-keV Kr+ ions at an incidence angle of 70 degrees, and the light emitted was analyzed over the wavelength range 200-300 nm. The surface morphology was investigated, and the micrographs revealed grooves parallel to the plane of incidence when the porosity was surprisingly observed in the grooves under each pore. The results are discussed as a function of the incidence angle and the porosity of the silicon targets.
Added by: Laurent Cournède |