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Avella, M., Jimenez, J., Pommereau, F., Landesman, J. P. & Rhallabi, A. (2007) Investigation of point defect generation in dry etched InP ridge waveguide structures. Appl. Phys. Lett. 90 223510.
Added by: Laurent Cournède (2016-03-10 22:02:30) |
| Type de référence: Article DOI: 10.1063/1.2743384 Numéro d'identification (ISBN etc.): 0003-6951 Clé BibTeX: Avella2007 Voir tous les détails bibliographiques  |
Catégories: PCM Mots-clés: damage, layers, photoluminescence, quantum-well Créateurs: Avella, Jimenez, Landesman, Pommereau, Rhallabi Collection: Appl. Phys. Lett. |
Consultations : 1/560
Indice de consultation : 4% Indice de popularité : 1% |
| Résumé |
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Waveguides engraved in InP by dry etching, reactive ion etching and inductively coupled plasma (ICP), were studied by cathodoluminescence. The dry etching processes were found to induce nonradiative recombination centers, which reduce the luminescence emission from the ridge structures. In addition, the ICP process introduced intrinsic defects, probably In vacancy related defects, which were generated at the dielectric cap/InP interface at the ridge top. (C) 2007 American Institute of Physics.
Added by: Laurent Cournède |