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Abdallah, B., Chala, A., Jouan, P. .-Y., Besland, M. P. & Djouadi, M. A. (2007) Deposition of AlN films by reactive sputtering: Effect of radio frequency substrate bias. Thin Solid Films, 515 7105–7108. 
Added by: Laurent Cournède (2016-03-10 22:02:30)
Type de référence: Article
DOI: 10.1016/j.tsf.2007.03.006
Numéro d'identification (ISBN etc.): 0040-6090
Clé BibTeX: Abdallah2007
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Catégories: INTERNATIONAL, PCM
Mots-clés: acoustic-wave devices, Aluminium nitride, band, growth, ion-bombardment, nitride films, stress, stress measurements, substrate bias effect, thin-films, TiN films, vapor-deposition, X-ray diffraction
Créateurs: Abdallah, Besland, Chala, Djouadi, Jouan
Collection: Thin Solid Films
Consultations : 10/645
Indice de consultation : 1%
Indice de popularité : 0.25%
Résumé     
Piezoelectric AlN thin films were deposited on Silicon substrates by triode reactive sputtering. The variation of residual stress versus bias voltage on the substrate was investigated. A compressive stress was always observed with a maximum value for a negative substrate bias of 50 V. For higher negative bias voltage values, the compressive stress decreases. X-ray diffraction measurements showed two kinds of growth orientation. First, without bias voltage, films are well crystallized and (002) oriented. Second, with bias voltage, the (002) orientation disappears and a small peak appears (situated in the 2 theta=32 degrees-33 degrees range) which can be attributed to (100) orientation. Finally, the influence of compressive stress and ion bombardment on the change of orientation is discussed. (c) 2007 Elsevier B.V. All rights reserved.
Added by: Laurent Cournède  
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