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Hadjichristov, G. B., Ivanov, V. & Faulques, E. (2008) Reflectivity modification of polymethylmethacrylate by silicon ion implantation. Appl. Surf. Sci. 254 4820–4827. 
Added by: Laurent Cournède (2016-03-10 21:58:41)
Type de référence: Article
DOI: 10.1016/j.apsusc.2008.01.115
Numéro d'identification (ISBN etc.): 0169-4332
Clé BibTeX: Hadjichristov2008a
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Catégories: MIOPS
Mots-clés: amorphous-carbon, beam-induced changes, constants, films, guides, Ion implanted polymers, optical properties, optical-properties, photoluminescence, pmma, polymers, polymethylmethacrylate, reflectivity, refractive-index
Créateurs: Faulques, Hadjichristov, Ivanov
Collection: Appl. Surf. Sci.
Consultations : 10/399
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
The effect of silicon ion implantation on the optical reflection of bulk polymethylmethacrylate (PMMA) was examined in the visible and near UV. A low-energy (30 and 50 keV) Si(+) beam at fluences in the range from 10(13) to 10(17) cm(-2) was used for ion implantation of PMMA. The results show that a significant enhancement of the reflectivity from Si(+)-implanted PMMA occurs at appropriate implantation energy and fluence. The structural modifications of PMMA by the silicon ion implantation were characterized by means of photoluminescence and Raman spectroscopy. Formation of hydrogenated amorphous carbon (HAC) layer beneath the surface of the samples was established and the corresponding HAC domain size was estimated. (C) 2008 Elsevier B.V. All rights reserved.
Added by: Laurent Cournède  
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