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Souilah, M., Lafond, A., Barreau, N., Guillot-Deudon, C. & Kessler, J. (2008) Evidence for a modified-stannite crystal structure in wide band gap Cu-poor CuIn(1-x)Ga(x)Se(2): Impact on the optical properties. Appl. Phys. Lett. 92 241923. 
Added by: Laurent Cournède (2016-03-10 21:58:41)
Type de référence: Article
DOI: 10.1063/1.2944254
Numéro d'identification (ISBN etc.): 0003-6951
Clé BibTeX: Souilah2008
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Catégories: CESES
Mots-clés: chalcopyrite, solar-cells
Créateurs: Barreau, Guillot-Deudon, Kessler, Lafond, Souilah
Collection: Appl. Phys. Lett.
Consultations : 1/519
Indice de consultation : 3%
Indice de popularité : 0.75%
Résumé     
The crystal structure of high Ga-content CuIn(1-x)Ga(x)Se(2) (CIGSe) compounds has been further investigated with the help of single crystal x-ray diffraction technique. It is known that CIGSe compounds adopt the chalcopyrite crystal structure. In the case of Cu-poor, Ga-rich CIGSe, the present study shows that an alternative structure should be considered. This structure is derived from that of stannite in which there is a Ga/In segregation on two different atomic planes. The diffuse reflectance measurements of the Cu-poor compound reveal a slightly different band gap and a smoother transition compared with those of the stoichiometric compound. (C) 2008 American Institute of Physics.
Added by: Laurent Cournède  
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