IMN

Biblio. IMN

Référence en vue solo

Duquenne, C., Djouadi, M. A., Tessier, P. Y., Jouan, P. Y., Besland, M. P., Brylinski, C., Aubry, R. & Delage, S. (2008) Epitaxial growth of aluminum nitride on AlGaN by reactive sputtering at low temperature. Appl. Phys. Lett. 93 052905. 
Added by: Laurent Cournède (2016-03-10 21:58:41)
Type de référence: Article
DOI: 10.1063/1.2967816
Numéro d'identification (ISBN etc.): 0003-6951
Clé BibTeX: Duquenne2008a
Voir tous les détails bibliographiques
Catégories: PCM
Mots-clés: aln, deposition, orientation, thin-films
Créateurs: Aubry, Besland, Brylinski, Delage, Djouadi, Duquenne, Jouan, Tessier
Collection: Appl. Phys. Lett.
Consultations : 14/711
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
We report the synthesis of 1 mu m thick single crystalline aluminum nitride films by dc magnetron sputtering on AlGaN/GaN layer grown on sapphire substrate at low temperature (substrate temperature {<} 250 degrees C). The microstructure of c-axis oriented AlN films deposited on Si (100) and AlGaN {<} 0001 {>} substrates was studied by x-ray diffraction, selected area electron diffraction, and transmission electron microscopy. The optimization of process parameters, involving low energetic ion bombardment on film surface (20-30 eV) during the growth, leads to an increase in the surface mobility and thus promotes AlN epitaxial growth on AlGaN substrate at 250 degrees C.
Added by: Laurent Cournède  
wikindx 4.2.2 ©2014 | Références totales : 2641 | Requêtes métadonnées : 58 | Exécution de script : 0.11639 secs | Style : Harvard | Bibliographie : Bibliographie WIKINDX globale