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Duquenne, C., Djouadi, M. A., Tessier, P. Y., Jouan, P. Y., Besland, M. P., Brylinski, C., Aubry, R. & Delage, S. (2008) Epitaxial growth of aluminum nitride on AlGaN by reactive sputtering at low temperature. Appl. Phys. Lett. 93 052905.
Added by: Laurent Cournède (2016-03-10 21:58:41) |
| Type de référence: Article DOI: 10.1063/1.2967816 Numéro d'identification (ISBN etc.): 0003-6951 Clé BibTeX: Duquenne2008a Voir tous les détails bibliographiques  |
Catégories: PCM Mots-clés: aln, deposition, orientation, thin-films Créateurs: Aubry, Besland, Brylinski, Delage, Djouadi, Duquenne, Jouan, Tessier Collection: Appl. Phys. Lett. |
Consultations : 6/851
Indice de consultation : 5% Indice de popularité : 1.25% |
| Résumé |
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We report the synthesis of 1 mu m thick single crystalline aluminum nitride films by dc magnetron sputtering on AlGaN/GaN layer grown on sapphire substrate at low temperature (substrate temperature {<} 250 degrees C). The microstructure of c-axis oriented AlN films deposited on Si (100) and AlGaN {<} 0001 {>} substrates was studied by x-ray diffraction, selected area electron diffraction, and transmission electron microscopy. The optimization of process parameters, involving low energetic ion bombardment on film surface (20-30 eV) during the growth, leads to an increase in the surface mobility and thus promotes AlN epitaxial growth on AlGaN substrate at 250 degrees C.
Added by: Laurent Cournède |