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Renaud, C., Huang, C. H., Lee, C. W., Le Rendu, P. & Nguyen, T. P. (2008) Study of trap states in polyfluorene based devices by using TSC technique. Thin Solid Films, 516 7209–7213. 
Added by: Laurent Cournède (2016-03-10 21:58:41)
Type de référence: Article
DOI: 10.1016/j.tsf.2007.12.063
Numéro d'identification (ISBN etc.): 0040-6090
Clé BibTeX: Renaud2008b
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Catégories: PMN
Mots-clés: alq(3), currents, electronic traps, emission properties, injection, light-emitting-diodes, polyfluorene derivative, polymer, spectroscopy, thermally stimulated currents, transport, Traps
Créateurs: Huang, Le Rendu, Lee, Nguyen, Renaud
Collection: Thin Solid Films
Consultations : 15/655
Indice de consultation : 3%
Indice de popularité : 0.75%
Résumé     
The trap states in poly(9,9-dihexylfluorene-co-N,N-di(9,9-dihexyl-2-fluorenyl)-N-phenylamine) (PF-N-Ph) based light emitting diodes have been investigated by using the thermally stimulated current (TSC) technique in the temperature range of 90-320 K. The studied structure consisted of indium-tin-oxide/polyethylene-dioxythiophene: polystyrene-sulfonate/PF-N-Ph/Al. Four traps centers denoted as A, B, C, and D trap types have been identified with densities in the range of 10(16)-10(17) cm(-3). Study of the dependence of TSC characteristics on the device polarity suggested that the A, C and D type traps are electron traps while the B type traps are hole traps. They can be described by Gaussian distributions centered on mean trap levels. (c) 2008 Elsevier B.V. All rights reserved.
Added by: Laurent Cournède  
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