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Fiorito, P. A., Alves, W. A., Bazitoi, F. F. C., El Haber, F., Froyer, G., de Torresi, S. C. I. & Torresi, R. M. (2008) Characterization of anodic silicon oxide films grown in room temperature ionic liquids. Electrochim. Acta, 53 7396–7402.
Added by: Laurent Cournède (2016-03-10 21:58:41) |
| Type de référence: Article DOI: 10.1016/j.electacta.2007.11.048 Numéro d'identification (ISBN etc.): 0013-4686 Clé BibTeX: Fiorito2008 Voir tous les détails bibliographiques  |
Catégories: PMN Mots-clés: acetonitrile, alloys, conduction mechanism, Electrochemical oxidation, evolution, impedance measurements, impedance spectroscopy, in-situ characterization, ionic liquids, oxidation, passive films, peroxide, roughness, si(100), silicon oxides Créateurs: Alves, Bazitoi, El Haber, Fiorito, Froyer, de Torresi, Torresi Collection: Electrochim. Acta |
Consultations : 9/464
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| Résumé |
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The electroformation of silicon oxide was performed in two room temperature ionic liquids (RTIL), 1-butyl-3-methyl-imidazolium bis(trifluoromethane sulfonyl) imide (BMITFSI) and N-n-butyl-N-methylpiperidinium bis(trifluoromethane sulfonyl) imide (BMPTFSI). This phenomenon was studied by electrochemical techniques and it was observed that the oxide growth follows a high-field mechanism. X-ray Photoelectron Spectroscopy experiments have shown that a non-stoichiometric oxide film was formed, related to the low water content present in both RTILs ({<} 30 ppm). The roughness values obtained by using AFM technique of the silicon surface after etching with HF was 1.5 nm (RMS). The electrochemical impedance spectroscopy at low frequencies range was interpreted as a resistance in parallel with a CPE element, the capacitance obtained was associated with the dielectric nature of the oxide formed and the resistance was interpreted considering the chemical dissolution of the oxide by the presence of the TFSI anion. The CPE element was associated with the surface roughness and the very thin oxide film obtained. (C) 2007 Elsevier Ltd. All rights reserved.
Added by: Laurent Cournède |