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Bulou, S., Le Brizoual, L., Hugon, R., De Poucques, L., Belmahi, M., Migeon, H.-N. & Bougdira, J. (2009) Characterization of a N-2/CH4 Microwave Plasma With a Solid Additive Si Source Used for SiCN Deposition. Plasma Process. Polym. 6 S576–S581. 
Added by: Laurent Cournède (2016-03-10 21:41:25)
Type de référence: Article
DOI: 10.1002/ppap.200931404
Numéro d'identification (ISBN etc.): 1612-8850
Clé BibTeX: Bulou2009
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Catégories: PCM
Mots-clés: discharge, growth, microwave discharges, n-2-ch4, nitride thin-films, Optical emission spectroscopy, plasma-enhanced chemical vapour deposition, Silicon carbonitride
Créateurs: Belmahi, Bougdira, Bulou, De Poucques, Hugon, Le Brizoual, Migeon
Collection: Plasma Process. Polym.
Consultations : 1/579
Indice de consultation : 4%
Indice de popularité : 1%
Microwave plasma assisted chemical vapour deposition of CH4/N-2 gas mixture using an additive solid silicon is used to synthesize SiCN. To better understand the mechanisms involved, species such as C, Si, NH, CN, C-2 and N-2 are observed by means of optical emission spectroscopy. In situ Fourier transform infrared spectroscopy (FTIR) is used as a plasma diagnostic and CH4, NH3, HCN and C2H2 have been detected. Deposits are achieved at various CH4 ratios (1, 4 and 8\%) and analysed by means of scanning electron microscopy, energy dispersion X-ray spectroscopy and FTIR spectroscopy. Adding a silicon source permits to obtain thicker layers confirming the major role of Si in the carbonitride deposition process. Deposits obtained at 8\% of CH4 have a composition about 35\% of Si, 30\% C and 30\% N and showed evidence of ternary SiCN system.
Added by: Laurent Cournède  
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