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Nguyen, T. P. & Renaud, C. (2009) Interface effects on the defect state formation in organic devices. Nelson, R. L., Kajzar, F. & Kaino, T. (Eds.), Organic Photonic Materials and Devices Xi Bellingham.
Added by: Laurent Cournède (2016-03-10 21:41:25) |
| Type de référence: Chapitre/Section Numéro d'identification (ISBN etc.): 978-0-8194-7459-9 Clé BibTeX: Nguyen2009a Voir tous les détails bibliographiques  |
Catégories: PMN Mots-clés: Defects, Interface, oleds, pedot-pss, Polyfluorene Créateurs: Kaino, Kajzar, Nelson, Nguyen, Renaud Éditeur: Spie-Int Soc Optical Engineering (Bellingham) Collection: Organic {Photonic} {Materials} and {Devices} {Xi} |
Consultations : 1/1005
Indice de consultation : 7% Indice de popularité : 1.75% |
| Résumé |
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We have investigated the role of interfaces in the formation of traps in organic devices using poly(9,9-dihexylfluorene-co-N,N-di(9,9-dihexyl-2-fluorenyl)-N-phenylamine) (PF-N-Ph) as an emissive material. The basic structure of the studied diodes is ITO/PEDOT:PSS/PF/M where M is Al or Ca/Al. Trap parameters have been measured by Charge based Deep Level Transient Spectroscopy (Q-DLTS) in diodes having different electrode configurations. Five trap levels have been identified in the basic device structures with activation energies in the range of 0.1 - 0.6 eV and trap densities in the range of 10(16) - 10(17) cm(-3). On the cathode side, no noticeable changes have been observed when changing the electrode from aluminium to calcium. On the anode side, comparing the trap parameters in devices with and without a PEDOT:PSS layer, we show that the hole injection layer introduced new trap levels, which are electron-traps. The density of these traps is of the order of 10(16) cm(-3) and their levels are at similar to 0.3 and similar to 0.5 eV from the band edges. The findings confirm and complete quantitatively earlier results by other groups on the role of the PEDOT:PSS /organic interface in the trap formation in OLEDs.
Added by: Laurent Cournède |