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Pereira, J., Pichon, L. E., Dussart, R., Cardinaud, C., Duluard, C. Y., Oubensaid, E. H., Lefaucheux, P., Boufnichel, M. & Ranson, P. (2009) In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O-2 cryoetching process. Appl. Phys. Lett. 94 071501. 
Added by: Laurent Cournède (2016-03-10 21:41:24)
Type de référence: Article
DOI: 10.1063/1.3085957
Numéro d'identification (ISBN etc.): 0003-6951
Clé BibTeX: Pereira2009
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Catégories: PCM
Mots-clés: Carbon, cryogenic temperatures, cryogenics, density, desorption, fluorine, mechanisms, Oxygen, passivation, plasma, plasma materials processing, sf6, silicon, silicon compounds, sputter etching, X-ray photoelectron spectra
Créateurs: Boufnichel, Cardinaud, Duluard, Dussart, Lefaucheux, Oubensaid, Pereira, Pichon, Ranson
Collection: Appl. Phys. Lett.
Consultations : 10/460
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
The oxyfluorinated silicon passivation layer created during various cryoetching processes is of interest in order to improve high aspect ratio profiles. In this work, the desorption of a SiOxFy layer obtained in an overpassivating SF6/O-2 regime was investigated during the wafer warm-up from the cryogenic temperature to room temperature. An in situ x-ray photoelectron spectroscopy (XPS) device is used in order to probe the top-surface layer and understand the desorption mechanism. A new mechanism can be proposed using the evolution of fluorine, oxygen, silicon, and carbon contributions evidenced by XPS.
Added by: Laurent Cournède  
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