 |
 |
|
Hadjichristov, G. B., Gueorguiev, V. K., Ivanov, T. E., Marinov, Y. G., Ivanov, V. G. & Faulques, E. (2009) The transconductance of a nano-clustered subsurface layer in Si+-implanted PMMA. J. Optoelectron. Adv. Mater. 11 1206–1209.
Added by: Laurent Cournède (2016-03-10 21:41:23) |
| Type de référence: Article Numéro d'identification (ISBN etc.): 1454-4164 Clé BibTeX: Hadjichristov2009a Voir tous les détails bibliographiques  |
Catégories: MIOPS Mots-clés: Ion implanted polymers, Organic field-effect devices, polymers, polymethylmethacrylate, Polymethylmethacrylate (PMMA) Créateurs: Faulques, Gueorguiev, Hadjichristov, Ivanov, Ivanov, Marinov Collection: J. Optoelectron. Adv. Mater. |
Consultations : 3/421
Indice de consultation : 3% Indice de popularité : 0.75% |
| Résumé |
|
The transconductance of a nano-clustered organic subsurface layer of a thickness of about 100 nm, formed in polymethylmethacrylate (PMMA) by implantation with silicon ions at an energy of 50 keV, is examined as a function of the Si+ fluence in the range 10(15) - 10(17) cm(-2). Depending on the implantation regime, the ion-modified region of the Si+-implanted PMMA exhibits a transconductance and a field effect that can be used for electronic applications
Added by: Laurent Cournède |