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Barreau, N. & Tessier, M. (2010) Characterization of indium sulfide thin films containing copper. Yamada, A., Heske, C., Contreras, M. A., Igalson, M. & Irvine, S. J. C. (Eds.), Thin-Film Compound Semiconductor Voltaics-2009 Warrendale. 
Added by: Laurent Cournède (2016-03-10 21:37:33)
Type de référence: Chapitre/Section
Clé BibTeX: Barreau2010a
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Catégories: PCM
Mots-clés: buffer layers, solar-cells
Créateurs: Barreau, Contreras, Heske, Igalson, Irvine, Tessier, Yamada
Éditeur: Materials Research Society (Warrendale)
Collection: Thin-{Film} {Compound} {Semiconductor} {Voltaics}-2009
Consultations : 7/324
Indice de consultation : 1%
Indice de popularité : 0.25%
Résumé     
The crystalline, optical and electrical properties of In(2)S(3) containing copper thin films are investigated. Increasing the amount of copper within the In(2)S(3) crystalline matrix yields reduced bandgap value and hindered conductivity. The films investigated being synthesized at low temperature (200 degrees C), it is likely they have similar properties as the materials formed at the CuIn(1-x)Ga(x)Se(2)/In(2)S(3) interface.
Added by: Laurent Cournède  
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