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Barreau, N. & Tessier, M. (2010) Characterization of indium sulfide thin films containing copper. Yamada, A., Heske, C., Contreras, M. A., Igalson, M. & Irvine, S. J. C. (Eds.), Thin-Film Compound Semiconductor Voltaics-2009 Warrendale.
Added by: Laurent Cournède (2016-03-10 21:37:33) |
| Type de référence: Chapitre/Section Clé BibTeX: Barreau2010a Voir tous les détails bibliographiques  |
Catégories: PCM Mots-clés: buffer layers, solar-cells Créateurs: Barreau, Contreras, Heske, Igalson, Irvine, Tessier, Yamada Éditeur: Materials Research Society (Warrendale) Collection: Thin-{Film} {Compound} {Semiconductor} {Voltaics}-2009 |
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The crystalline, optical and electrical properties of In(2)S(3) containing copper thin films are investigated. Increasing the amount of copper within the In(2)S(3) crystalline matrix yields reduced bandgap value and hindered conductivity. The films investigated being synthesized at low temperature (200 degrees C), it is likely they have similar properties as the materials formed at the CuIn(1-x)Ga(x)Se(2)/In(2)S(3) interface.
Added by: Laurent Cournède |