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Baer, M., Barreau, N., Couzinie-Devy, F., Pookpanratana, S., Klaer, J., Blum, M., Zhang, Y., Yang, W., Denlinger, J. D., Schock, H. .-W., Weinhardt, L., Kessler, J. & Heske, C. (2010) Nondestructive depth-resolved spectroscopic investigation of the heavily intermixed In2S3/Cu(In,Ga)Se-2 interface. Appl. Phys. Lett. 96 184101. 
Added by: Laurent Cournède (2016-03-10 21:37:32)
Type de référence: Article
DOI: 10.1063/1.3425739
Numéro d'identification (ISBN etc.): 0003-6951
Clé BibTeX: Baer2010
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Catégories: CESES, INTERNATIONAL
Mots-clés: alcvd, cu, deposition, film solar-cells, in2s3, pvd, sulfide buffer layers
Créateurs: Baer, Barreau, Blum, Couzinie-Devy, Denlinger, Heske, Kessler, Klaer, Pookpanratana, Schock, Weinhardt, Yang, Zhang
Collection: Appl. Phys. Lett.
Consultations : 15/634
Indice de consultation : 3%
Indice de popularité : 0.75%
Résumé     
The chemical structure of the interface between a nominal In2S3 buffer and a Cu(In,Ga)Se-2 (CIGSe) thin-film solar cell absorber was investigated by soft x-ray photoelectron and emission spectroscopy. We find a heavily intermixed, complex interface structure, in which Cu diffuses into (and Na through) the buffer layer, while the CIGSe absorber surface/interface region is partially sulfurized. Based on our spectroscopic analysis, a comprehensive picture of the chemical interface structure is proposed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3425739]
Added by: Laurent Cournède  
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