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Bailly, F., David, T., Chevolleau, T., Darnon, M., Posseme, N., Bouyssou, R., Ducote, J., Joubert, O. & Cardinaud, C. (2010) Roughening of porous SiCOH materials in fluorocarbon plasmas. J. Appl. Phys. 108 014906. 
Added by: Laurent Cournède (2016-03-10 21:37:32)
Type de référence: Article
DOI: 10.1063/1.3446820
Numéro d'identification (ISBN etc.): 0021-8979
Clé BibTeX: Bailly2010
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Catégories: PCM
Mots-clés: dielectric coral films, impact, ion etching lag, line-edge roughness, low-k films, oxidizing ash plasmas, shadow instability, silicon dioxide, sioch materials, Surface
Créateurs: Bailly, Bouyssou, Cardinaud, Chevolleau, Darnon, David, Ducote, Joubert, Posseme
Collection: J. Appl. Phys.
Consultations : 7/356
Indice de consultation : 1%
Indice de popularité : 0.25%
Résumé     
Porous SiCOH materials integration for integrated circuits faces serious challenges such as roughening during the etch process. In this study, atomic force microscopy is used to investigate the kinetics of SiCOH materials roughening when they are etched in fluorocarbon plasmas. We show that the root mean square roughness and the correlation length linearly increase with the etched depth, after an initiation period. We propose that: (1) during the first few seconds of the etch process, the surface of porous SiCOH materials gets denser. (2) Cracks are formed, leading to the formation of deep and narrow pits. (3) Plasma radicals diffuse through those pits and the pore network and modify the porous material at the bottom of the pits. (4) The difference in material density and composition between the surface and the bottom of the pits leads to a difference in etch rate and an amplification of the roughness. In addition to this intrinsic roughening mechanism, the presence of a metallic mask (titanium nitride) can lead to an extrinsic roughening mechanism, such as micromasking caused by metallic particles originating form the titanium nitride mask. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3446820]
Added by: Laurent Cournède  
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