IMN

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Jouan, P.-Y., Le Brizoual, L., Ganciu, M., Cardinaud, C., Tricot, S. & Djouadi, M.-A. (2010) HiPIMS Ion Energy Distribution Measurements in Reactive Mode. IEEE Trans. Plasma Sci. 38 3089–3094. 
Added by: Laurent Cournède (2016-03-10 21:37:31)
Type de référence: Article
DOI: 10.1109/TPS.2010.2073688
Numéro d'identification (ISBN etc.): 0093-3813
Clé BibTeX: Jouan2010
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Catégories: PCM
Mots-clés: aln films, aluminum, aluminum nitride, high-power impulse magnetron sputtering (HiPIMS), mass spectrometry, nitride, plasma, pulsed-magnetron discharge, target, vapor-deposition
Créateurs: Cardinaud, Djouadi, Ganciu, Jouan, Le Brizoual, Tricot
Collection: IEEE Trans. Plasma Sci.
Consultations : 19/673
Indice de consultation : 3%
Indice de popularité : 0.75%
Résumé     
In this paper, mass spectrometry was used to measure the ion energy distributions of the main species during the sputtering of an aluminum target in a reactive Ar + N(2) mixture. Both conventional magnetron sputtering (dc) and high-power impulse magnetron sputtering (HiPIMS) were used. It appears that, in the HiPIMS, N(+) and Al(+) ions are significantly more energetic (up to 70 eV) than in the dc ({<} 40 eV). Furthermore, the HiPIMS Al(+) signal is two orders of magnitude greater than in the dc, and time-resolved measurements indicate that most of the ion flux hits the substrate during the OFF time of the impulse sequence.
Added by: Laurent Cournède  
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