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Lajaunie, L., David, M. L. & Barbot, J. F. (2011) Physical properties of Co/n-Ge Schottky contacts. J. Phys. D-Appl. Phys. 44 125103. 
Added by: Laurent Cournède (2016-03-10 21:32:21)
Type de référence: Article
DOI: 10.1088/0022-3727/44/12/125103
Numéro d'identification (ISBN etc.): 0022-3727
Clé BibTeX: Lajaunie2011
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Catégories: IMN
Mots-clés: barrier heights, Defects, diodes, electron-beam deposition, germanium, metal-semiconductor interfaces, si, temperature-dependence
Créateurs: Barbot, David, Lajaunie
Collection: J. Phys. D-Appl. Phys.
Consultations : 11/479
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
To investigate the role of the interface state on the physical properties of Schottky contacts, Co/n-Ge Schottky diodes that have undergone various cleaning methods (HF etching and in situ thermal cleaning) were studied by transmission electron microscopy, deep-level transient spectroscopy and by a detailed analysis of the temperature dependence of the characteristics of the diodes. It is shown that Schottky barrier height characteristics are sensitive to the nature of the interface. The strongest Fermi level (FL) pinning and the highest spatial inhomogeneities are observed for intimate metal/semiconductor contacts. The presence of a thin oxide interlayer, even of Ge native oxide, allows the FL to be released towards the conduction band and leads to more homogeneous contacts. Finally, our results suggest that a pure GeO(2) oxide interlayer should present a better depinning efficiency than the native Ge oxide.
Added by: Laurent Cournède  
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