Biblio. IMN

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Chavillon, B., Cario, L., Renaud, A., Tessier, F., Chevire, F., Boujtita, M., Pellegrin, Y., Blart, E., Smeigh, A., Hammarstrom, L., Odobel, F. & Jobic, S. (2012) P-Type Nitrogen-Doped ZnO Nanoparticles Stable under Ambient Conditions. J. Am. Chem. Soc. 134 464–470. 
Added by: Richard Baschera (2016-03-10 21:28:40)   Last edited by: Richard Baschera (2016-08-30 10:00:32)
Type de référence: Article
DOI: 10.1021/ja208044k
Numéro d'identification (ISBN etc.): 0002-7863
Clé BibTeX: Chavillon2012
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Mots-clés: Conductivity, decomposition, deposition, devices, laocus, peroxide, thin-films, titania nanoparticles, undoped zno, zinc-oxide
Créateurs: Blart, Boujtita, Cario, Chavillon, Chevire, Hammarstrom, Jobic, Odobel, Pellegrin, Renaud, Smeigh, Tessier
Collection: J. Am. Chem. Soc.
Consultations : 1/690
Indice de consultation : 5%
Indice de popularité : 1.25%
Zinc oxide is considered as a very promising material for optoelectronics. However, to date, the difficulty in producing stable p-type ZnO is a bottleneck, which hinders the advent of ZnO-based devices. In that context, nitrogen-doped zinc oxide receives much attention. However, numerous reviews report the controversial character of p-type conductivity in N-doped ZnO, and recent theoretical contributions explain that N-doping alone cannot lead, to p-typeness in Zn-rich ZnO. We report here that the ammonolysis at low temperature or ZnO2 yields pure wurtzite-type N-doped ZnO nanoparticles with an extraordinarily large amount of Zn vacancies (up to 20\%). Electrochemical and transient spectroscopy studies demonstrate that these Zn-poor nanoparticles exhibit a p-type conductivity that is stable over more than 2 years under ambient conditions.
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