IMN

Biblio. IMN

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Adda, C., Corraze, B., Stoliar, P., Diener, P., Tranchant, J., Filatre-Furcate, A., Fourmigue, M., Lorcy, D., Besland, M.-P., Janod, E. & Cario, L. (2018) Mott insulators: A large class of materials for Leaky Integrate and Fire (LIF) artificial neuron. J. Appl. Phys. 124 152124.   
Last edited by: Richard Baschera 2018-12-19 13:41:58 Pop. 1.75%
Adda, C., Cario, L., Trenchant, J., Janod, E., Besiand, M.-P., Rozenberg, M., Stoliar, P. & Corraze, B. (2018) First demonstration of "Leaky Integrate and Fire" artificial neuron behavior on (V0.95Cr0.05)(2)O-3 thin film. MRS Commun. 8 835–841.   
Last edited by: Richard Baschera 2018-12-20 08:28:45 Pop. 1.75%
Bouchoule, S., Vallier, L., Patriarche, G., Chevolleau, T. & Cardinaud, C. (2012) Effect of Cl-2- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy. J. Vac. Sci. Technol. A, 30 031301.   
Added by: Laurent Cournède 2016-03-10 21:28:39 Pop. 1%
Chanson, R., Rhallabi, A., Fernandez, M. C., Cardinaud, C., Bouchoule, S., Gatilova, L. & Talneau, A. (2012) Global Model of Cl-2/Ar High-Density Plasma Discharge and 2-D Monte-Carlo Etching Model of InP. IEEE Trans. Plasma Sci. 40 959–971.   
Added by: Laurent Cournède 2016-03-10 21:28:39 Pop. 1%
Lallement, L., Gosse, C., Cardinaud, C., Peignon-Fernandez, M. .-C. & Rhallabi, A. (2010) Etching studies of silica glasses in SF6/Ar inductively coupled plasmas: Implications for microfluidic devices fabrication. J. Vac. Sci. Technol. A, 28 277–286.   
Added by: Laurent Cournède 2016-03-10 21:37:33 Pop. 1%
Lallement, L., Rhallabi, A., Cardinaud, C. & Fernandez, M. C. P. (2011) Modelling of fluorine based high density plasma for the etching of silica glasses. J. Vac. Sci. Technol. A, 29 051304.   
Added by: Laurent Cournède 2016-03-10 21:32:20 Pop. 1%
Li, D., Carette, M., Granier, A., Landesman, J. P. & Goullet, A. (2012) Spectroscopic ellipsometry analysis of TiO2 films deposited by plasma enhanced chemical vapor deposition in oxygen/titanium tetraisopropoxide plasma. Thin Solid Films, 522 366–371.   
Added by: Laurent Cournède 2016-03-10 21:28:38 Pop. 1%
Pereira, J., Pichon, L. E., Dussart, R., Cardinaud, C., Duluard, C. Y., Oubensaid, E. H., Lefaucheux, P., Boufnichel, M. & Ranson, P. (2009) In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O-2 cryoetching process. Appl. Phys. Lett. 94 071501.   
Added by: Laurent Cournède 2016-03-10 21:41:24 Pop. 1%
Raballand, V., Cartry, G. & Cardinaud, C. (2007) A model for Si, SiCH, SiO2, SiOCH, and porous SiOCH etch rate calculation in inductively coupled fluorocarbon plasma with a pulsed bias: Importance of the fluorocarbon layer. J. Appl. Phys. 102 063306.   
Added by: Laurent Cournède 2016-03-10 22:02:29 Pop. 0.75%
Raballand, V., Cartry, G. & Cardinaud, C. (2007) Porous SiOCH, SiCH and SiO2 etching in high density fluorocarbon plasma with a pulsed bias. Plasma Process. Polym. 4 563–573.   
Added by: Laurent Cournède 2016-03-10 22:02:29 Pop. 1%
Supiot, P., Vivien, C., Granier, A., Bousquet, A., Mackova, A., Escaich, D., Clergereaux, R., Raynaud, P., Stryhal, Z. & Pavlik, J. (2006) Growth and modification of organosilicon films in PECVD and remote afterglow reactors. Plasma Process. Polym. 3 100–109.   
Added by: Florent Boucher 2016-05-12 13:21:37 Pop. 1%
wikindx 4.2.2 ©2014 | Références totales : 2859 | Requêtes métadonnées : 70 | Exécution de script : 0.10387 secs | Style : Harvard | Bibliographie : Bibliographie WIKINDX globale