Chanson, R., Rhallabi, A., Fernandez, M. C., Cardinaud, C., Bouchoule, S., Gatilova, L. & Talneau, A. (2012) Global Model of Cl-2/Ar High-Density Plasma Discharge and 2-D Monte-Carlo Etching Model of InP. IEEE Trans. Plasma Sci. 40 959–971. |
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Chanson, R., Rhallabi, A., Fernandez, M. C. & Cardinaud, C. (2013) Modeling of InP Etching Under ICP Cl2/Ar/N2 Plasma Mixture: Effect of N2 on the Etch Anisotropy Evolution. Plasma Process. Polym. 10 213–224. |
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Cosson, M., David, B., Arzel, L., Poizot, P. & Rhallabi, A. (2022) Modelling of photovoltaic production and electrochemical storage in an autonomous solar drone. eScience, 2 235–241. |
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Elmonser, L., Rhallabi, A., Gaillard, M., Landesman, J. P., Talneau, A., Pommereau, F. & Bouadma, N. (2007) Modeling of the chemically assisted ion beam etching process: Application to the GaAs etching by Cl-2/Ar+. J. Vac. Sci. Technol. A, 25 126–133. |
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Added by: Laurent Cournède 2016-03-10 22:02:31 |
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Girault, B., Vidal, V., Thilly, L., Renault, P. .-O., Goudeau, P., LeBourhis, E., Villain-Valat, P., Geandier, G., Tranchant, J., Landesman, J. .-P., Tessier, P. .-Y., Angleraud, B., Besland, M. .-P., Djouadi, A. & Lecouturier, F. (2008) Small scale mechanical properties of polycrystalline materials: in situ diffraction studies. Int. J. Nanotechnol. 5 609–630. |
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Added by: Laurent Cournède 2016-03-10 21:58:43 |
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Haidar, Y., Pateau, A., Rhallabi, A., Fernandez, M. C., Mokrani, A., Taher, F., Roqueta, F. & Boufnichel, M. (2014) SF6 and C4F8 global kinetic models coupled to sheath models. Plasma Sources Sci. Technol. 23 065037. |
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Added by: Laurent Cournède 2016-03-10 21:01:54 |
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Lallement, L., Gosse, C., Cardinaud, C., Peignon-Fernandez, M. .-C. & Rhallabi, A. (2010) Etching studies of silica glasses in SF6/Ar inductively coupled plasmas: Implications for microfluidic devices fabrication. J. Vac. Sci. Technol. A, 28 277–286. |
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Added by: Laurent Cournède 2016-03-10 21:37:33 |
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Marcos, G., Rhallabi, A. & Ranson, P. (2008) Properties of deep etched trenches in silicon: Role of the angular dependence of the sputtering yield and the etched species redeposition. Appl. Surf. Sci. 254 3576–3584. |
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Added by: Laurent Cournède 2016-03-10 21:58:42 |
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