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Bouts, N., Gaillard, M., Donero, L., El Mel, A. A., Gautron, E., Angleraud, B., Boulmer-Leborgne, C. & Tessier, P. Y. (2017) Growth control of carbon nanotubes using nanocomposite nickel/carbon thin films. Thin Solid Films, 630 38–47. |
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Chanson, R., Rhallabi, A., Fernandez, M. C. & Cardinaud, C. (2013) Modeling of InP Etching Under ICP Cl2/Ar/N2 Plasma Mixture: Effect of N2 on the Etch Anisotropy Evolution. Plasma Process. Polym. 10 213–224. |
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Chanson, R., Rhallabi, A., Fernandez, M. C., Cardinaud, C., Bouchoule, S., Gatilova, L. & Talneau, A. (2012) Global Model of Cl-2/Ar High-Density Plasma Discharge and 2-D Monte-Carlo Etching Model of InP. IEEE Trans. Plasma Sci. 40 959–971. |
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Ferrec, A., Keraudy, J. & Jouan, P.-Y. (2016) Mass spectrometry analyzes to highlight differences between short and long HiPIMS discharges. Appl. Surf. Sci. 390 497–505. |
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Haidar, Y., Pateau, A., Rhallabi, A., Fernandez, M. C., Mokrani, A., Taher, F., Roqueta, F. & Boufnichel, M. (2014) SF6 and C4F8 global kinetic models coupled to sheath models. Plasma Sources Sci. Technol. 23 065037. |
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Jouan, P.-Y., Le Brizoual, L., Ganciu, M., Cardinaud, C., Tricot, S. & Djouadi, M.-A. (2010) HiPIMS Ion Energy Distribution Measurements in Reactive Mode. IEEE Trans. Plasma Sci. 38 3089–3094. |
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Li, D., Goullet, A., Carette, M., Granier, A., Zhang, Y. & Landesman, J. P. (2016) Structural and optical properties of RF-biased PECVD TiO2 thin films deposited in an O-2/TTIP helicon reactor. Vacuum, 131 231–239. |
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Li, D., Elisabeth, S., Granier, A., Carette, M., Goullet, A. & Landesman, J.-P. (2016) Structural and Optical Properties of PECVD TiO2-SiO2 Mixed Oxide Films for Optical Applications. Plasma Process. Polym. 13 918–928. |
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Liu, B., Landesman, J. .-P., Leclercq, J. .-L., Rhallabi, A., Cardinaud, C., Guilet, S., Pommereau, F., Avella, M., Gonzalez, M. A. & Jimenez, J. (2006) InP surface properties under ICP plasma etching using mixtures of chlorides and hydrides. Mater. Sci. Semicond. Process, 9 225–229. |
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Marcos, G., Rhallabi, A. & Ranson, P. (2008) Properties of deep etched trenches in silicon: Role of the angular dependence of the sputtering yield and the etched species redeposition. Appl. Surf. Sci. 254 3576–3584. |
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Pereira, J., Pichon, L. E., Dussart, R., Cardinaud, C., Duluard, C. Y., Oubensaid, E. H., Lefaucheux, P., Boufnichel, M. & Ranson, P. (2009) In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O-2 cryoetching process. Appl. Phys. Lett. 94 071501. |
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Tailleur, A., Achour, A., Djouadi, M. A., Le Brizoual, L., Gautron, E. & Tristant, P. (2012) PECVD low temperature synthesis of carbon nanotubes coated with aluminum nitride. Surf. Coat. Technol. 211 18–23. |
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Added by: Laurent Cournède 2016-03-10 21:28:38 |
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