IMN

Biblio. IMN

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Chanson, R., Rhallabi, A., Fernandez, M. C., Cardinaud, C., Bouchoule, S., Gatilova, L. & Talneau, A. (2012) Global Model of Cl-2/Ar High-Density Plasma Discharge and 2-D Monte-Carlo Etching Model of InP. IEEE Trans. Plasma Sci. 40 959–971.   
Added by: Laurent Cournède 2016-03-10 21:28:39 Pop. 0.5%
Chanson, R., Rhallabi, A., Fernandez, M. C., Cardinaud, C. & Landesman, J. P. (2013) Modeling of inductively coupled plasma Ar/Cl-2/N-2 plasma discharge: Effect of N-2 on the plasma properties. J. Vac. Sci. Technol. A, 31 011301.   
Added by: Laurent Cournède 2016-03-10 21:23:32 Pop. 0.5%
Chanson, R., Rhallabi, A., Fernandez, M. C. & Cardinaud, C. (2013) Modeling of InP Etching Under ICP Cl2/Ar/N2 Plasma Mixture: Effect of N2 on the Etch Anisotropy Evolution. Plasma Process. Polym. 10 213–224.   
Added by: Laurent Cournède 2016-03-10 21:23:31 Pop. 0.5%
Elmonser, L., Rhallabi, A., Gaillard, M., Landesman, J. P., Talneau, A., Pommereau, F. & Bouadma, N. (2007) Modeling of the chemically assisted ion beam etching process: Application to the GaAs etching by Cl-2/Ar+. J. Vac. Sci. Technol. A, 25 126–133.   
Added by: Laurent Cournède 2016-03-10 22:02:31 Pop. 0.75%
Landesman, J. P., Levallois, C., Jimenez, J., Pommereau, F., Leger, Y., Beck, A., Delhaye, T., Torres, A., Frigeri, C. & Rhallabi, A. (2015) Evidence of chlorine ion penetration in InP/InAsP quantum well structures during dry etching processes and effects of induced-defects on the electronic and structural behaviour. Microelectron. Reliab. 55 1750–1753.   
Added by: Laurent Cournède 2016-03-10 18:36:41 Pop. 0.5%
Liu, B., Landesman, J. .-P., Leclercq, J. .-L., Rhallabi, A., Cardinaud, C., Guilet, S., Pommereau, F., Avella, M., Gonzalez, M. A. & Jimenez, J. (2006) InP surface properties under ICP plasma etching using mixtures of chlorides and hydrides. Mater. Sci. Semicond. Process, 9 225–229.   
Added by: Florent Boucher 2016-05-12 13:21:38 Pop. 0.5%
wikindx 4.2.2 ©2014 | Références totales : 2626 | Requêtes métadonnées : 52 | Exécution de script : 0.09287 secs | Style : Harvard | Bibliographie : Bibliographie WIKINDX globale