| Edon, V., Hugon, M. C., Agius, B., Cohen, C., Cardinaud, C. & Eypert, C. (2007) Structural and electrical properties of the interfacial layer in sputter deposited LaAlO3/Si thin films. Thin Solid Films, 515 7782–7789. |
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| Added by: Laurent Cournède 2016-03-10 22:02:29 |
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| Elmonser, L., Rhallabi, A., Gaillard, M., Landesman, J. P., Talneau, A., Pommereau, F. & Bouadma, N. (2007) Modeling of the chemically assisted ion beam etching process: Application to the GaAs etching by Cl-2/Ar+. J. Vac. Sci. Technol. A, 25 126–133. |
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| Added by: Laurent Cournède 2016-03-10 22:02:31 |
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| Eon, D., Raballand, V., Cartry, G., Cardinaud, C., Vourdas, N., Argitis, P. & Gogolides, E. (2006) Plasma oxidation of polyhedral oligomeric silsesquioxane polymers. J. Vac. Sci. Technol. B, 24 2678–2688. |
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| Added by: Florent Boucher 2016-05-12 13:21:36 |
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| Eon, D., Raballand, V., Cartry, G. & Cardinaud, C. (2007) High density fluorocarbon plasma etching of methylsilsesquioxane SiOC(H) low-k material and SiC(H) etch stop layer: surface analyses and investigation of etch mechanisms. J. Phys. D-Appl. Phys. 40 3951–3959. |
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| Added by: Laurent Cournède 2016-03-10 22:02:29 |
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| Girard, A., Geneste, F., Coulon, N., Cardinaud, C. & Mohammed-Brahim, T. (2013) SiGe derivatization by spontaneous reduction of aryl diazonium salts. Appl. Surf. Sci. 282 146–155. |
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| Added by: Laurent Cournède 2016-03-10 21:23:30 |
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| Haidar, Y., Pateau, A., Rhallabi, A., Fernandez, M. C., Mokrani, A., Taher, F., Roqueta, F. & Boufnichel, M. (2014) SF6 and C4F8 global kinetic models coupled to sheath models. Plasma Sources Sci. Technol. 23 065037. |
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| Added by: Laurent Cournède 2016-03-10 21:01:54 |
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| Li, D., Dai, S., Goullet, A. & Granier, A. (2018) The Effect of Plasma Gas Composition on the Nanostructures and Optical Properties of TiO2 Films Prepared by Helicon-PECVD. Nano, 13 1850124. |
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| Last edited by: Richard Baschera 2018-12-20 08:33:31 |
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| Marcos, G., Rhallabi, A. & Ranson, P. (2008) Properties of deep etched trenches in silicon: Role of the angular dependence of the sputtering yield and the etched species redeposition. Appl. Surf. Sci. 254 3576–3584. |
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| Added by: Laurent Cournède 2016-03-10 21:58:42 |
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| Pateau, A., Rhallabi, A., Fernandez, M.-C., Boufnichel, M. & Roqueta, F. (2014) Modeling of inductively coupled plasma SF6/O-2/Ar plasma discharge: Effect of O-2 on the plasma kinetic properties. J. Vac. Sci. Technol. A, 32 021303. |
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| Added by: Florent Boucher 2016-04-29 09:26:44 |
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| Pereira, J., Pichon, L. E., Dussart, R., Cardinaud, C., Duluard, C. Y., Oubensaid, E. H., Lefaucheux, P., Boufnichel, M. & Ranson, P. (2009) In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O-2 cryoetching process. Appl. Phys. Lett. 94 071501. |
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| Added by: Laurent Cournède 2016-03-10 21:41:24 |
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| Rhallabi, A., Chanson, R., Landesman, J. .-P., Cardinaud, C. & Fernandez, M. .-C. (2011) Atomic scale study of InP etching by Cl-2-Ar ICP plasma discharge. Eur. Phys. J.-Appl. Phys, 53 33606. |
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| Added by: Laurent Cournède 2016-03-10 21:32:21 |
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| Rouahi, A., Challali, F., Dakhlaoui, I., Vallee, C., Salimy, S., Jomni, F., Yangui, B., Besland, M. P., Goullet, A. & Sylvestre, A. (2016) Structural and dielectric characterization of sputtered Tantalum Titanium Oxide thin films for high temperature capacitor applications. Thin Solid Films, 606 127–132. |
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| Last edited by: Richard Baschera 2016-06-03 13:58:09 |
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| Salimy, S., Challali, F., Goullet, A., Besland, M. .-P., Carette, M., Gautier, N., Rhallabi, A., Landesman, J. P., Toutain, S. & Averty, D. (2013) Electrical Characteristics of TiTaO Thin Films Deposited on SiO2/Si Substrates by Magnetron Sputtering. ECS Solid State Lett. 2 Q13–Q15. |
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| Added by: Laurent Cournède 2016-03-10 21:23:32 |
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| Salimy, S., Goullet, A., Rhallabi, A., Challali, F., Toutain, S. & Saubat, J. C. (2011) A unified analytical and scalable lumped model of RF CMOS spiral inductors based on electromagnetic effects and circuit analysis. Solid-State Electron. 61 38–45. |
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| Added by: Laurent Cournède 2016-03-10 21:32:20 |
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