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Adda, C., Tranchant, J., Stoliar, P., Corraze, B., Janod, E., Gay, R., Llopis, R., Besland, M.-P., Hueso, L. E. & Cario, L. (2017) An artificial neuron founded on resistive switching of Mott insulators. 2017 Ieee 9th International Memory Workshop (imw).   
Last edited by: Richard Baschera 2017-10-24 13:35:47 Pop. 0.75%
Adda, C., Corraze, B., Stoliar, P., Diener, P., Tranchant, J., Filatre-Furcate, A., Fourmigue, M., Lorcy, D., Besland, M.-P., Janod, E. & Cario, L. (2018) Mott insulators: A large class of materials for Leaky Integrate and Fire (LIF) artificial neuron. J. Appl. Phys. 124 152124.   
Last edited by: Richard Baschera 2018-12-19 13:41:58 Pop. 1%
Babich, D., Cario, L., Corraze, B., Lorenc, M., Tranchant, J., Bertoni, R., Cammarata, M., Cailleau, H. & Janod, E. (2022) Artificial Electro-Optical Neuron Integrating Hot Electrons in a Mott Insulator. Phys. Rev. Applied, 17 014040.   
Last edited by: Richard Baschera 2022-02-10 16:59:15 Pop. 4.5%
Bouquet, V., Cario, L., Cordier, S., Guilloux-Viry, M., Querre, M., Corraze, B., Janod, E., Besland, M. P., Tranchant, J. & Potel, M. 2014. Electric Pulse Induced Resistive Switching in the Narrow Gap Mott Insulator GaMo4S8. Paper read at Inorganic and Environmental Materials.   
Last edited by: Richard Baschera 2016-08-30 12:52:10 Pop. 0.75%
Huitric, G., Rodriguez-Fano, M., Gournay, L., Godin, N., Hervé, M., Privault, G., Tranchant, J., Khaldi, Z., Cammarata, M., Collet, E., Janod, E. & Odin, C. (2022) Impact of the terahertz and optical pump penetration depths on generated strain waves temporal profiles in a V2O3 thin film. Faraday Discuss.   
Last edited by: Richard Baschera 2022-06-16 07:59:14 Pop. 15%
Janod, E., Tranchant, J., Corraze, B., Querre, M., Stoliar, P., Rozenberg, M., Cren, T., Roditchev, D., Phuoc, V. T., Besland, M.-P. & Cario, L. (2015) Resistive Switching in Mott Insulators and Correlated Systems. Adv. Funct. Mater. 25 6287–6305.   
Last edited by: Richard Baschera 2020-04-07 13:02:41 Pop. 0.75%
Querre, M., Janod, E., Cario, L., Tranchant, J., Corraze, B., Bouquet, V., Deputier, S., Cordier, S., Guilloux-Viry, M. & Besland, M.-P. (2016) Metal-insulator transitions in (V1-xCrx)(2)O-3 thin films deposited by reactive direct current magnetron co-sputtering. Thin Solid Films, 617 56–62.   
Last edited by: Richard Baschera 2016-12-23 15:06:05 Pop. 1%
Rupp, J. A. J., Corraze, B., Besland, M.-P., Cario, L., Tranchant, J., Wouters, D. J., Waser, R. & Janod, E. (2020) Control of stoichiometry and morphology in polycrystalline V(2)O(3)thin films using oxygen buffers. Journal of Materials Science, 55 14717–14727.   
Last edited by: Richard Baschera 2020-11-25 15:26:23 Pop. 1.5%
Stoliar, P., Tranchant, J., Corraze, B., Janod, E., Besland, M.-P., Tesler, F., Rozenberg, M. & Cario, L. (2017) A Leaky-Integrate-and-Fire Neuron Analog Realized with a Mott Insulator. Adv. Funct. Mater. 27 1604740.   
Last edited by: Richard Baschera 2017-04-11 13:30:43 Pop. 0.5%
Stoliar, P., Diener, P., Tranchant, J., Corraze, B., Briere, B., Ta-Phuoc, V., Bellec, N., Fourmigue, M., Lorcy, D., Janod, E. & Cario, L. (2015) Resistive Switching Induced by Electric Pulses in a Single-Component Molecular Mott Insulator. J. Phys. Chem. C, 119 2983–2988.   
Added by: Laurent Cournède 2016-03-10 18:36:42 Pop. 0.5%
Stoliar, P., Cario, L., Janod, E., Corraze, B., Guillot-Deudon, C., Salmon-Bourmand, S., Guiot, V., Tranchant, J. & Rozenberg, M. (2013) Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators. Adv. Mater. 25 3222–3226.   
Added by: Laurent Cournède 2016-03-10 21:23:30 Pop. 0.75%
Tesler, F., Adda, C., Tranchant, J., Corraze, B., Janod, E., Cario, L., Stoliar, P. & Rozenberg, M. (2018) Relaxation of a Spiking Mott Artificial Neuron. Phys. Rev. Appl. 10 054001.   
Last edited by: Richard Baschera 2018-12-20 08:29:47 Pop. 0.5%
Tranchant, J., Janod, E., Corraze, B., Stoliar, P., Rozenberg, M., Besland, M.-P. & Cario, L. (2015) Control of resistive switching in AM(4)Q(8) narrow gap Mott insulators: A first step towards neuromorphic applications. Phys. Status Solidi A-Appl. Mat. 212 239–244.   
Last edited by: Richard Baschera 2020-04-07 14:51:37 Pop. 0.5%
wikindx 4.2.2 ©2014 | Références totales : 2608 | Requêtes métadonnées : 81 | Exécution de script : 0.22377 secs | Style : Harvard | Bibliographie : Bibliographie WIKINDX globale