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Igalson, M., Macielak, K., Urbaniak, A., Barreau, N. & Larsen, J. (2017) Excitation spectra of defect levels derived from photoinduced current transient spectroscopy - a tool for studying deep levels in Cu(In,Ga)Se-2 compounds. Thin Solid Films, 633 227–230.
Added by: Richard Baschera (2017-07-27 07:30:18) Last edited by: Richard Baschera (2017-07-27 07:32:58) |
| Type de référence: Article DOI: 10.1016/j.tsf.2016.11.046 Numéro d'identification (ISBN etc.): 0040-6090 Clé BibTeX: Igalson2017 Voir tous les détails bibliographiques  |
Catégories: INTERNATIONAL, MIOPS Créateurs: Barreau, Igalson, Larsen, Macielak, Urbaniak Collection: Thin Solid Films |
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| Résumé |
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Energy required for the optical excitation of carriers onto defect levels is a parameter that compliments thermal activation energy and helps to understand the electronic properties of defects under study. Here a modification of the photoinduced current transient spectroscopy (PICTS) based on phase-sensitive detection is proposed which makes possible to measure the excitation spectra of defect levels. The representative results of the excitation spectra of the epitaxial CuGaSe2 and polycrystalline Cu(In,Ga)Se-2 thin films are presented. They illustrate the usefulness of the method as a tool for studying defect properties by providing data that supplement information derived from standard PICTS spectroscopy. (C) 2016 Elsevier B.V. All rights reserved.
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