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Bouquet, V., Cario, L., Cordier, S., Guilloux-Viry, M., Querre, M., Corraze, B., Janod, E., Besland, M. P., Tranchant, J. & Potel, M. 2014. Electric Pulse Induced Resistive Switching in the Narrow Gap Mott Insulator GaMo4S8. Paper read at Inorganic and Environmental Materials.
Added by: Richard Baschera (2016-08-30 12:51:40) Last edited by: Richard Baschera (2016-08-30 12:52:10) |
| Type de référence: Communication DOI: 10.4028/www.scientific.net/KEM.617.135 Clé BibTeX: Bouquet2014 Voir tous les détails bibliographiques  |
Catégories: PCM, PMN Mots-clés: Chalcogenide, Cluster Compound, Lacunar spinel, Mott-Insulator, resistive switching Créateurs: Besland, Bouquet, Cario, Cordier, Corraze, Guilloux-Viry, Janod, Potel, Querre, Tranchant Collection: Inorganic and Environmental Materials |
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We report here on resistive switching measurements on GaMo4S8 a lacunar spinel compound with tetrahedral Mo4 clusters filled with 11 electrons. Alike other clustered lacunar spinel compounds with 7 or 8 electrons per cluster, this narrow gap Mott Insulator exhibits both a volatile and a non-volatile unipolar resistive switching. We found that the volatile resistive switching appears above a threshold electric field in the 7 kV/cm range. For electric field much larger than this threshold, the resistive switching becomes non-volatile. Successive electric pulses allow switching back and forth between high and low resistance states. All these results demonstrate that the narrow gap Mott insulator compound GaMo4S8 could be a relevant candidate for a new type of non-volatile memory based on an electric field induced breakdown of the Mott insulating state.
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