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Bulou, S., Le Brizoual, L., Miska, P., de Poucques, L., Bougdira, J. & Belmahi, M. (2012) Wide variations of SiCxNy:H thin films optical constants deposited by H-2/N-2/Ar/hexamethyldisilazane microwave plasma. Surf. Coat. Technol. 208 46–50. 
Added by: Laurent Cournède (2016-03-10 21:28:38)
Type de référence: Article
DOI: 10.1016/j.surfcoat.2012.07.079
Numéro d'identification (ISBN etc.): 0257-8972
Clé BibTeX: Bulou2012
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Catégories: PCM
Mots-clés: (dimethylamino)dimethylsilane precursor, amorphous-silicon, c-n films, chemical composition, chemical-vapor-deposition, h films, Microwave plasma induced chemical vapor deposition, nitrogen plasma, optical constants, organosilicon compound, si-n, SiCN thin films, silicon carbonitride films, surface passivation, tetramethyldisilazane source
Créateurs: Belmahi, Bougdira, Bulou, Le Brizoual, Miska, de Poucques
Collection: Surf. Coat. Technol.
Consultations : 11/392
Indice de consultation : 2%
Indice de popularité : 0.5%
SiCxNy:H thin film growth has been achieved in N-2/H-2/Ar/hexamethyldisilazane microwave plasma induced chemical vapor deposition process. Depending on the N-2 and H-2 flow rates, film composition can be changed from "SiCx:H-like" to "SiNx:H-like". Therefore, refractive index (n) and Tauc's optical gap (Eg) are modified over a wide range of values (1.75 {<}= n {<}= 2.15 and 3.5 eV {<}= Eg {<}= 5 eV). In addition, n and Eg values are closely related to Si - C bonding density. N-2 addition to the plasma leads to the substitution of Si - C by Si - N bonds in the film and results in important composition and optical constants variations. This "silane free" process appears as an interesting plasma induced chemical vapor deposition process for silicon-based coating synthesis in the field of optical applications. (c) 2012 Elsevier B.V. All rights reserved.
Added by: Laurent Cournède  
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