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Thissandier, F., Le Comte, A., Crosnier, O., Gentile, P., Bidan, G., Hadji, E., Brousse, T. & Sadki, S. (2012) Highly doped silicon nanowires based electrodes for micro-electrochemical capacitor applications. Electrochem. Commun. 25 109–111.
Added by: Laurent Cournède (2016-03-10 21:28:38) |
| Type de référence: Article DOI: 10.1016/j.elecom.2012.09.019 Numéro d'identification (ISBN etc.): 1388-2481 Clé BibTeX: Thissandier2012 Voir tous les détails bibliographiques  |
Catégories: ST2E Mots-clés: Carbon, Chemical vapor deposition, devices, electrochemical capacitor, growth, Micro-device, Silicon nanowires, storage, Supercapacitor Créateurs: Bidan, Brousse, Crosnier, Gentile, Hadji, Le Comte, Sadki, Thissandier Collection: Electrochem. Commun. |
Consultations : 10/505
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Highly doped (both n and p-type dopings) silicon nanowires (SiNWs) have been deposited via Chemical Vapor Deposition and investigated as electrode materials for micro-capacitor in a standard organic based electrolyte. Silicon nanostructuration enables to increase areal capacitance. Double layer capacitance values up to 46 mu F.cm(-2) have been measured. Micro capacitors based on two SiNWs electrodes exhibit an excellent cycling ability and power density as high as 1.6 mW.cm(-2). (C) 2012 Elsevier B.V. All rights reserved.
Added by: Laurent Cournède |