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Thissandier, F., Le Comte, A., Crosnier, O., Gentile, P., Bidan, G., Hadji, E., Brousse, T. & Sadki, S. (2012) Highly doped silicon nanowires based electrodes for micro-electrochemical capacitor applications. Electrochem. Commun. 25 109–111. 
Added by: Laurent Cournède (2016-03-10 21:28:38)
Type de référence: Article
DOI: 10.1016/j.elecom.2012.09.019
Numéro d'identification (ISBN etc.): 1388-2481
Clé BibTeX: Thissandier2012
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Catégories: ST2E
Mots-clés: Carbon, Chemical vapor deposition, devices, electrochemical capacitor, growth, Micro-device, Silicon nanowires, storage, Supercapacitor
Créateurs: Bidan, Brousse, Crosnier, Gentile, Hadji, Le Comte, Sadki, Thissandier
Collection: Electrochem. Commun.
Consultations : 3/392
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
Highly doped (both n and p-type dopings) silicon nanowires (SiNWs) have been deposited via Chemical Vapor Deposition and investigated as electrode materials for micro-capacitor in a standard organic based electrolyte. Silicon nanostructuration enables to increase areal capacitance. Double layer capacitance values up to 46 mu F.cm(-2) have been measured. Micro capacitors based on two SiNWs electrodes exhibit an excellent cycling ability and power density as high as 1.6 mW.cm(-2). (C) 2012 Elsevier B.V. All rights reserved.
Added by: Laurent Cournède  
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