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Salimy, S., Challali, F., Goullet, A., Besland, M. .-P., Carette, M., Gautier, N., Rhallabi, A., Landesman, J. P., Toutain, S. & Averty, D. (2013) Electrical Characteristics of TiTaO Thin Films Deposited on SiO2/Si Substrates by Magnetron Sputtering. ECS Solid State Lett. 2 Q13–Q15. 
Added by: Laurent Cournède (2016-03-10 21:23:32)
Type de référence: Article
DOI: 10.1149/2.006303ssl
Numéro d'identification (ISBN etc.): 2162-8742
Clé BibTeX: Salimy2013
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Catégories: PCM
Mots-clés: gate dielectrics, interfaces, silicon
Créateurs: Averty, Besland, Carette, Challali, Gautier, Goullet, Landesman, Rhallabi, Salimy, Toutain
Collection: ECS Solid State Lett.
Consultations : 8/354
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
Electrical properties of metal-oxide-semiconductor capacitors based on TiTaO thin films deposited by reactive magnetron sputtering on silicon substrates are investigated. Electrical and optical parameters of TiTaO films have been extracted. The formation of a silicon dioxide interfacial layer during the first stage of the deposition process has been evidenced both by HRTEM observations and ellipsometric measurements. TiTaO MOS capacitors were characterized by C-V and I-V measurements: a high dielectric constant value of TiTaO thin film (kappa = 59) and leakage current of 5.10(-7) A/cm(2) at 2.5 V were obtained. Oxide charges within the TiTaO bulk were characterized as thickness dependent and vary with opposite sign as compare to the native silicon oxide interfacial layer. (C) 2013 The Electrochemical Society. [DOI: 10.1149/2.006303ssl] All rights reserved.
Added by: Laurent Cournède  
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