Salimy, S., Challali, F., Goullet, A., Besland, M. .-P., Carette, M., Gautier, N., Rhallabi, A., Landesman, J. P., Toutain, S. & Averty, D. (2013) Electrical Characteristics of TiTaO Thin Films Deposited on SiO2/Si Substrates by Magnetron Sputtering. ECS Solid State Lett. 2 Q13–Q15.
Added by: Laurent Cournède (2016-03-10 21:23:32) |
Type de référence: Article DOI: 10.1149/2.006303ssl Numéro d'identification (ISBN etc.): 2162-8742 Clé BibTeX: Salimy2013 Voir tous les détails bibliographiques |
Catégories: PCM Mots-clés: gate dielectrics, interfaces, silicon Créateurs: Averty, Besland, Carette, Challali, Gautier, Goullet, Landesman, Rhallabi, Salimy, Toutain Collection: ECS Solid State Lett. |
Consultations : 1/465
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Résumé |
Electrical properties of metal-oxide-semiconductor capacitors based on TiTaO thin films deposited by reactive magnetron sputtering on silicon substrates are investigated. Electrical and optical parameters of TiTaO films have been extracted. The formation of a silicon dioxide interfacial layer during the first stage of the deposition process has been evidenced both by HRTEM observations and ellipsometric measurements. TiTaO MOS capacitors were characterized by C-V and I-V measurements: a high dielectric constant value of TiTaO thin film (kappa = 59) and leakage current of 5.10(-7) A/cm(2) at 2.5 V were obtained. Oxide charges within the TiTaO bulk were characterized as thickness dependent and vary with opposite sign as compare to the native silicon oxide interfacial layer. (C) 2013 The Electrochemical Society. [DOI: 10.1149/2.006303ssl] All rights reserved.
Added by: Laurent Cournède |