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Phuoc, T. V., Vaju, C., Corraze, B., Sopracase, R., Perucchi, A., Marini, C., Postorino, P., Chligui, M., Lupi, S., Janod, E. & Cario, L. (2013) Optical Conductivity Measurements of GaTa4Se8 Under High Pressure: Evidence of a Bandwidth-Controlled Insulator-to-Metal Mott Transition. Phys. Rev. Lett. 110 037401. 
Added by: Laurent Cournède (2016-03-10 21:23:31)
Type de référence: Article
DOI: 10.1103/PhysRevLett.110.037401
Numéro d'identification (ISBN etc.): 0031-9007
Clé BibTeX: Phuoc2013
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Catégories: PMN
Mots-clés: electronic-properties, physics, possible superconductivity, systems
Créateurs: Cario, Chligui, Corraze, Janod, Lupi, Marini, Perucchi, Phuoc, Postorino, Sopracase, Vaju
Collection: Phys. Rev. Lett.
Consultations : 2/395
Indice de consultation : 2%
Indice de popularité : 0.5%
The optical properties of a GaTa4Se8 single crystal are investigated under high pressure. At ambient pressure, the optical conductivity exhibits a charge gap of approximate to 0.12 eV and a broad midinfrared band at approximate to 0.55 eV. As pressure is increased, the low energy spectral weight is strongly enhanced and the optical gap is rapidly filled, pointing to an insulator to metal transition around 6 GPa. The overall evolution of the optical conductivity demonstrates that GaTa4Se8 is a Mott insulator which undergoes a bandwidth-controlled Mott metal-insulator transition under pressure, in remarkably good agreement with theory. With the use of our optical data and ab initio band structure calculations, our results were successfully compared to the (U/D, T/D) phase diagram predicted by dynamical mean field theory for strongly correlated systems.
Added by: Laurent Cournède  
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